Semiconductor device, method of manufacturing the same, and signal transmitting/receiving method using the semiconductor device

• US 10,115,783 B2
• Filed: 05/18/2017
• Issued: 10/30/2018
• Est. Priority Date: 12/04/2007
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: Nakashiba, Yasutaka
• Primary Examiner(s): Nguyen, Duy T
• Application Number:
  US15/598,475
• Publication Number:
  US 20170256602A1
• Time in Patent Office: 530 Days
• Field of Search: 257728, 257730, 257E2318, 257E23182, 257531
• CPC Class Codes: G01R 31/2886 Features relating to contacting the IC under test, e.g. probe heads; chucks G01R31/2865 takes precedence, test connections, e.g. test sockets, or probes per se, G01R1/04 or G01R1/06
• CPC Class Codes: G01R 31/3025 Wireless interface with the DUT
• CPC Class Codes: G01R 31/303 of integrated circuits G01R31/305 - G01R31/315 take precedence
• CPC Class Codes: H01L 28/10 Inductors

Abstract

A semiconductor device includes a semiconductor substrate including a semiconductor chip formation region, a chip internal circuit provided within the semiconductor chip formation region of the semiconductor substrate, a signal transmitting/receiving unit which is provided within the semiconductor chip formation region of the semiconductor substrate, transmits/receives a signal to/from an outside in a non-contact manner by one of electromagnetic induction and capacitive coupling, and transmits/receives a signal to/from the chip internal circuit through electrical connection to the chip internal circuit, and a power receiving inductor which has a diameter provided along an outer edge of the semiconductor chip formation region of the semiconductor substrate so as to surround the chip internal circuit and the signal transmitting/receiving unit, receives a power supply signal from the outside in the non-contact manner, and is electrically connected to the chip internal circuit.

Claims

1. A semiconductor device, comprising:

a semiconductor substrate;

an internal circuit provided on the semiconductor substrate;

a plurality of external connection pads provided on the semiconductor substrate and electrically connected to the internal circuit to transmit and receive signals to and from an outside of the semiconductor device;

an inductor provided on the semiconductor substrate and including the internal circuit and the plurality of external connection pads and connected to the internal circuit;

a shield member provided on the semiconductor substrate and positioned among the inductor, the internal circuit, and the plurality of external connection pads;

a power supply circuit provided on the semiconductor substrate; and

a power supply receiving inductor for supplying power to the internal circuit,

wherein the power supply receiving inductor is connected to the power supply circuit and supplies power to the internal circuit via the power supply circuit, and

wherein the plurality of external connection pads include a power supply external connection pad and a plurality of signal external connection pads.

2. The semiconductor device according to claim 1, further comprising:

a plurality of signal transceivers provided on the semiconductor substrate and being capable of transmitting and receiving signals to and from the outside by electromagnetic induction or capacitive coupling, and being electrically connected to the internal circuit,

wherein the plurality of signal transceivers are provided corresponding to the plurality of signal external connection pads.