Transistor structures having a deep recessed P+ junction and methods for making same
First Claim
1. A transistor device comprising:
- a gate and a source on an upper surface of the transistor device;
at least one doped well region of a first conductivity type that is different from a second conductivity type of a source region within the transistor device, the at least one doped well region having a recessed portion below the source and extending from the at least one doped well region by a depth sufficient to reduce an electrical field on a gate oxide on the gate, the recessed portion having a doping concentration that is less than a doping concentration of the at least one doped well region; and
a termination area adjacent the at least one doped well region, the termination area including at least one termination structure adjacent the at least one doped well region where the recessed portion is recessed deeper than the termination structure.
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Accused Products
Abstract
A transistor device having a deep recessed P+ junction is disclosed. The transistor device may comprise a gate and a source on an upper surface of the transistor device, and may include at least one doped well region, wherein the at least one doped well region has a first conductivity type that is different from a conductivity type of a source region within the transistor device and the at least one doped well region is recessed from the upper surface of the transistor device by a depth. The deep recessed P+ junction may be a deep recessed P+ implanted junction within a source contact area. The deep recessed P+ junction may be deeper than a termination structure in the transistor device. The transistor device may be a Silicon Carbide (SIC) MOSFET device.
39 Citations
20 Claims
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1. A transistor device comprising:
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a gate and a source on an upper surface of the transistor device; at least one doped well region of a first conductivity type that is different from a second conductivity type of a source region within the transistor device, the at least one doped well region having a recessed portion below the source and extending from the at least one doped well region by a depth sufficient to reduce an electrical field on a gate oxide on the gate, the recessed portion having a doping concentration that is less than a doping concentration of the at least one doped well region; and a termination area adjacent the at least one doped well region, the termination area including at least one termination structure adjacent the at least one doped well region where the recessed portion is recessed deeper than the termination structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification