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Storage element and memory

  • US 10,121,963 B2
  • Filed: 08/03/2017
  • Issued: 11/06/2018
  • Est. Priority Date: 12/12/2006
  • Status: Active Grant
First Claim
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1. A storage element comprising:

  • a layer structure includinga first magnetization layer having a first magnetization state;

    a second magnetization layer having a second magnetization state;

    an intermediate layer provided between the first magnetization layer and the second magnetization layer;

    a spin absorption layer configured to increase spin pumping of the first magnetization layer; and

    a spin barrier layer configured to suppress spin pumping of the first magnetization layer,wherein the second magnetization layer includes at least a first magnetic layer, a second magnetic layer and a non-magnetic layer, andwherein the spin barrier layer is provided between the spin absorption layer and the first magnetization layer.

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