Transistors and methods for making them

• US 10,121,970 B2
• Filed: 07/08/2016
• Issued: 11/06/2018
• Est. Priority Date: 05/26/2011
• Status: Active Grant

• Current Assignee: Silverray Limited
• Original Assignee: Wuhan Xinqu Chuangrou Optoelectronics Technology Co., Ltd.
• Inventors: Brown, Beverley Anne, Ogier, Simon Dominic, Palumbo, Marco, McCall, Keri Laura
• Primary Examiner(s): Kopec, Mark
• Application Number:
  US15/205,406
• Publication Number:
  US 20170005269A1
• Time in Patent Office: 851 Days
• CPC Class Codes: C08G 73/026 Wholly aromatic polyamines
• CPC Class Codes: C09D 179/02 Polyamines
• CPC Class Codes: C09D 5/24 Electrically-conducting paints conductive materials H01B1/00
• CPC Class Codes: H01B 1/121 Charge-transfer complexes
• CPC Class Codes: H10K 10/462 Insulated gate field-effect transistors [IGFETs]
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/488 the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
• CPC Class Codes: H10K 85/111 comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
• CPC Class Codes: H10K 85/115 Polyfluorene; Derivatives thereof
• CPC Class Codes: H10K 85/151 Copolymers
• CPC Class Codes: H10K 85/40 Organosilicon compounds, e.g. TIPS pentacene

Abstract

A semiconductor composition which comprises a soluble polyacene semiconductor and a polymeric semiconducting binder the binder having a permittivity greater than 3.4 at 000 Hz. The charge mobility of the semiconducting binder when measured in a pure state is greater than 10⁻⁷ cm²/Vs and more preferably greater than 10⁻⁶ cm²/Vs. Organic thin film transistors in which the source and drain electrodes are bridged by the semiconductor composition have desirable properties of reproducibility and charge mobility. The organic semiconducting composition can be applied by solution coating.

Claims

1. A semiconductor composition comprising:

a soluble polyacene semiconductor;

a polymeric semiconducting binder; and

wherein the polymeric semiconducting binder has a permittivity greater than 3.4 at 1000 Hz.

2. The semiconductor composition according to claim 1, wherein the charge mobility of the polymeric semiconducting binder when measured in a pure state is greater than 10⁻

7 cm²V<sup>−

1</sup>s<sup>−

1</sup>.

3. The semiconductor composition according to claim 2, wherein the charge mobility of the polymeric semiconducting binder when measured in a pure state is greater than 10⁻

6 cm²V<sup>−

1</sup>s<sup>−

1</sup>.

4. The semiconductor composition according to claim 1, wherein the soluble polyacene semiconductor is represented by at least one of the formula (A2), (A3), and (C):

5. The semiconductor composition according to claim 4, wherein the soluble polyacene semiconductor is represented by the formula (A2).

6. The semiconductor composition according to claim 5, wherein the soluble polyacene semiconductor is represented by the formula (A2) and wherein R¹, R⁴, R⁸ and R¹¹ are methyl and R^f are ethyl or are isopropyl.

7. The semiconductor composition according to claim 4, wherein the soluble polyacene semiconductor is represented by the formula (A3).

8. The semiconductor composition according to claim 7, wherein the soluble polyacene semiconductor is represented by the formula (A3) and wherein R², R³, R⁹, R¹⁰ are methyl and R^f are ethyl or are isopropyl.

9. The semiconductor composition according to claim 4, wherein the soluble polyacene semiconductor is represented by the formula (C).

10. The semiconductor composition according to claim 4, wherein the charge mobility of the polymeric semiconducting binder when measured in a pure state is greater than 10⁻

6 cm²V<sup>−

1</sup>s<sup>−

1</sup>.

11. The semiconductor composition according to claim 1, wherein the soluble polyacene semiconductor is represented by at least one of the formula B1(a), B1(b), B1(c), B1(d), B2(a), and B2(b):

12. The semiconductor composition according to claim 11, wherein the charge mobility of the polymeric semiconducting binder when measured in a pure state is greater than 10⁻

7 cm²V<sup>−

1</sup>s<sup>−

1</sup>.

13. The semiconductor composition according to claim 11, wherein the charge mobility of the polymeric semiconducting binder when measured in a pure state is greater than 10⁻

6 cm²V<sup>−

1</sup>s<sup>−

1</sup>.

14. The semiconductor composition according to claim 4, wherein the charge mobility of the polymeric semiconducting binder when measured in a pure state is greater than 10⁻

7 cm²V<sup>−

1</sup>s<sup>−

1</sup>.

15. An organic thin film transistor in which the source and drain electrodes are bridged by a semiconductor composition according to claim 1.

16. A process of manufacturing organic thin film transistors, the process comprising depositing an organic semiconducting composition according to claim 1 by solution coating.

17. A solution of a semiconductor composition, the semiconductor composition comprising a soluble polyacene semiconductor, a polymeric semiconducting binder, and wherein the polymeric semiconducting binder has a permittivity greater than 3.4 at 1000 Hz, the solution for use in a process of manufacturing organic thin film transistors, the process comprising depositing an organic semiconducting composition according to claim 1 by solution coating.