Co-integrated bulk acoustic wave resonators
First Claim
1. An electrical circuit assembly, comprising:
- a semiconductor integrated circuit; and
a first lateral-mode resonator fabricated upon a surface of the semiconductor integrated circuit, the first lateral-mode resonator comprising;
a deposited acoustic energy storage layer comprising a semiconductor layer;
a deposited piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer;
a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to the semiconductor integrated circuit; and
an acoustic mirror located between the deposited acoustic energy storage layer and the semiconductor integrated circuit;
wherein the semiconductor integrated circuit includes one or more transistor structures.
1 Assignment
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Accused Products
Abstract
An electrical circuit assembly can include a semiconductor integrated circuit, such as fabricated including CMOS devices. A first lateral-mode resonator can be fabricated upon a surface of the semiconductor integrated circuit, such as including a deposited acoustic energy storage layer including a semiconductor material, a deposited piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer, and a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to the semiconductor integrated circuit. The semiconductor integrated circuit can include one or more transistor structures, such as fabricated prior to fabrication of the lateral-mode resonator. Fabrication of the lateral-mode resonator can include low-temperature processing specified to avoid disrupting operational characteristics of the transistor structures.
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Citations
23 Claims
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1. An electrical circuit assembly, comprising:
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a semiconductor integrated circuit; and a first lateral-mode resonator fabricated upon a surface of the semiconductor integrated circuit, the first lateral-mode resonator comprising; a deposited acoustic energy storage layer comprising a semiconductor layer; a deposited piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer; a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to the semiconductor integrated circuit; and an acoustic mirror located between the deposited acoustic energy storage layer and the semiconductor integrated circuit; wherein the semiconductor integrated circuit includes one or more transistor structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An electrical circuit assembly, comprising:
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a semiconductor integrated circuit including complementary metal-oxide-semiconductor (CMOS) transistor structures; and an array of lateral-mode resonators fabricated upon the semiconductor integrated circuit, including a first lateral-mode resonator fabricated upon a surface of the semiconductor integrated circuit, the first lateral-mode resonator comprising; a deposited acoustic energy storage layer comprising a semiconductor layer; a deposited piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer; a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to at least one of the transistor structures of the semiconductor integrated circuit; and an acoustic mirror located between the deposited acoustic energy storage layer and the semiconductor integrated circuit. - View Dependent Claims (16)
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17. A method, comprising:
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forming an acoustic energy storage layer upon a surface of a semiconductor integrated circuit using a low-temperature deposition technique, the low-temperature deposition technique including a maximum temperature specified not to disrupt operating characteristics of transistor structures included as a portion of the semiconductor integrated circuit; forming a piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer; forming a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to the semiconductor integrated circuit; wherein the acoustic energy storage layer, the piezoelectric layer, and the first conductive region are included as a portion of a first lateral-mode resonator; wherein forming the acoustic energy storage layer comprises recrystallizing a deposited semiconductor material using a laser. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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Specification