Apparatus and techniques to treat substrates using directional plasma and point of use chemistry

• US 10,128,082 B2
• Filed: 07/24/2015
• Issued: 11/13/2018
• Est. Priority Date: 07/24/2015
• Status: Active Grant

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Liang, Shurong, Biloiu, Costel, Gilchrist, Glen, Singh, Vikram, Campbell, Christopher, Hertel, Richard John, Kontos, Alex
• Primary Examiner(s): Johnston, Phillip A
• Application Number:
  US14/808,612
• Publication Number:
  US 20170025252A1
• Time in Patent Office: 1,208 Days
• Field of Search: 250396 R
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: H01J 37/08 Ion sources; Ion guns
• CPC Class Codes: H01J 37/1471 for centering, aligning or positioning of ray or beam
• CPC Class Codes: H01J 37/3053 for evaporating or etching
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber.

Claims

1. An apparatus to treat a substrate, comprising:

an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate, the plasma beam comprising ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and

a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber, and wherein the gas outlet system comprises a channel, the channel extending along an edge of the plasma chamber.

2. The apparatus of claim 1, wherein the channel terminates at the extraction plate, and wherein the gas outlet system is arranged to deliver the reactive gas to the substrate alongside the plasma beam.

3. The apparatus of claim 1, wherein the extraction plate comprises an extraction aperture having an aperture width along a first direction and an aperture length along a second direction perpendicular to the first direction, wherein the aperture width is greater than the aperture length, wherein the plasma beam is a ribbon beam, wherein the gas outlet system comprises a plurality of gas orifices, wherein the plurality of gas orifices are arranged along a side of the extraction aperture along the first direction, and wherein at least one orifice of the plurality of orifices is coupled to the channel.

4. The apparatus of claim 1, wherein the reactive gas comprises a non-dissociated gas.

5. The apparatus of claim 1, wherein the reactive gas comprises methanol, ethanol, acetone, or other polar molecule.

6. The apparatus of claim 1, wherein the gas outlet system comprises a first set of outlets and a second set of outlets, wherein the gas source is coupled to the first set of outlets, the apparatus further comprising a second gas source, the second gas source coupled to the second set of outlets and configured to deliver a second reactive gas to the substrate.

7. A system to treat a substrate, comprising:

a plasma chamber to house a plasma;

an extraction plate to extract a plasma beam from the plasma chamber and direct the plasma beam to the substrate, the plasma beam comprising ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and

a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber, and wherein the gas outlet system comprises a channel, the channel extending along an edge of the plasma chamber.

8. The system of claim 7, wherein the extraction plate comprises an extraction aperture having an aperture width along a first direction and an aperture length along a second direction perpendicular to the first direction, wherein the aperture width is greater than the aperture length, wherein the plasma beam is a ribbon beam, the system further comprising a substrate holder configured to scan the substrate along the second direction.

9. The system of claim 8, wherein the gas outlet system comprises a plurality of gas orifices, wherein the plurality of gas orifices are arranged along a side of the extraction aperture along the first direction, and wherein at least one orifice of the plurality of orifices is coupled to the channel.

10. The system of claim 7 further comprising a control system to vary at least one system parameter from a first value to a second value, wherein the plasma beam has a first shape at the first value and a second shape at the second value, and wherein the at least one system parameter comprises:

level of RF power applied to the plasma chamber, RF waveform, extraction voltage of the plasma beam, configuration of extraction plate, or spacing between substrate and extraction plate.

11. The system of claim 7, wherein the reactive gas comprises a polar molecule, and wherein the plasma beam comprises inert gas ions.