Trench transistors and methods with low-voltage-drop shunt to body diode
First Claim
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1. A power semiconductor device, comprising:
- a first-conductivity-type source region;
a first trench containing a gate electrode which is capacitively coupled to a body region to selectably form a channel region therein;
at least one second trench containing a recessed field plate electrode;
a body contact region which is more heavily doped than said body region;
a plurality of shield regions;
wherein one said shield region is present beneath at least each said second trench;
a source metallization layer which is in ohmic contact with said source region and said body contact region, and which is electrically connected to said gate electrode; and
a backside metallization layer.
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Abstract
Methods and systems for power semiconductor devices integrating multiple trench transistors on a single chip. Multiple power transistors (or active regions) are paralleled, but one transistor has a lower threshold voltage. This reduces the voltage drop when the transistor is forward-biased. In an alternative embodiment, the power device with lower threshold voltage is simply connected as a depletion diode, to thereby shunt the body diodes of the active transistors, without affecting turn-on and ON-state behavior.
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Citations
12 Claims
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1. A power semiconductor device, comprising:
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a first-conductivity-type source region; a first trench containing a gate electrode which is capacitively coupled to a body region to selectably form a channel region therein; at least one second trench containing a recessed field plate electrode; a body contact region which is more heavily doped than said body region; a plurality of shield regions;
wherein one said shield region is present beneath at least each said second trench;a source metallization layer which is in ohmic contact with said source region and said body contact region, and which is electrically connected to said gate electrode; and a backside metallization layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification