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Semiconductor device having channel regions

  • US 10,128,379 B2
  • Filed: 07/12/2017
  • Issued: 11/13/2018
  • Est. Priority Date: 01/04/2017
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    protruding portions extending in parallel to each other on the substrate;

    nanowires provided on the protruding portions and separated from each other;

    gate electrodes provided on the substrate and surrounding the nanowires;

    source/drain regions provided on the protruding portions and sides of each of the gate electrodes, the source/drain regions being in contact with the nanowires; and

    first voids provided between the source/drain regions and the protruding portions.

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