Semiconductor device having channel regions
First Claim
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1. A semiconductor device comprising:
- a substrate;
protruding portions extending in parallel to each other on the substrate;
nanowires provided on the protruding portions and separated from each other;
gate electrodes provided on the substrate and surrounding the nanowires;
source/drain regions provided on the protruding portions and sides of each of the gate electrodes, the source/drain regions being in contact with the nanowires; and
first voids provided between the source/drain regions and the protruding portions.
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Abstract
A semiconductor device includes a substrate; protruding portions extending in parallel to each other on the substrate; nanowires provided on the protruding portions and separated from each other; gate electrodes provided on the substrate and surrounding the nanowires; source/drain regions provided on the protruding portions and sides of each of the gate electrodes, the source/drain regions being in contact with the nanowires; and first voids provided between the source/drain regions and the protruding portions.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a substrate; protruding portions extending in parallel to each other on the substrate; nanowires provided on the protruding portions and separated from each other; gate electrodes provided on the substrate and surrounding the nanowires; source/drain regions provided on the protruding portions and sides of each of the gate electrodes, the source/drain regions being in contact with the nanowires; and first voids provided between the source/drain regions and the protruding portions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a substrate; protruding portions extending in parallel to each other on the substrate; an isolation insulating layer provided on the substrate and covering a portion of side surfaces of the protruding portions; fin spacers provided on the isolation insulating layer and in contact with the side surfaces of the protruding portions; first channel regions provided on the protruding portions, the first channel regions being separated from each other and extended in a first direction; second channel regions provided above the first channel regions and extended in the first direction; gate electrodes extended in a second direction intersecting the first direction and surrounding the first channel regions and the second channel regions; inner spacers provided on sides of the gate electrodes, and between the first channel regions and the protruding portions; source/drain regions provided on the protruding portions and the sides of the gate electrodes, the source/drain regions being connected to the first channel regions and the second channel regions; and first voids provided between the source/drain regions and the protruding portions. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A semiconductor device comprising:
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a substrate; protruding portions extending in parallel to each other on the substrate; source/drain regions provided on the protruding portions and extended in a direction perpendicular to an upper surface of the substrate; nanowires providing a channel region extended in a first direction between the source/drain regions and separated from each other; a gate electrode surrounding the nanowires and extended in a second direction intersecting the first direction; a gate insulating film provided between the nanowires and the gate electrode; and voids provided between the source/drain regions and the protruding portions, wherein an upper boundary of the voids is lower than a lower surface of a lowermost nanowire among the nanowires.
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Specification