Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same

• US 10,128,382 B2
• Filed: 01/10/2018
• Issued: 11/13/2018
• Est. Priority Date: 08/05/2014
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Yoon, Seungho, Kim, Bong-Kyun, Kim, Youngjun, Park, Hongsick, Kim, Byeong-Beom, Shin, Sangwon
• Primary Examiner(s): Nguyen, Thanh-Nhan P
• Application Number:
  US15/866,890
• Publication Number:
  US 20180130908A1
• Time in Patent Office: 307 Days
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 21/467 using masks
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A thin film transistor substrate includes a thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode. Each of the source electrode and the drain electrode includes a wire layer and a protective layer. The protective layer includes zinc oxide in an amount greater than about 70% by weight and less than about 85% by weight and indium oxide in an amount greater than about 15% by weight and less than about 30% by weight.

Claims

1. A thin film transistor substrate comprising:

a base substrate; and

a thin film transistor on the base substrate, the thin film transistor comprising;

a gate electrode on the base substrate;

a semiconductor layer on the gate electrode;

a source electrode overlapping the semiconductor layer; and

a drain electrode overlapping the semiconductor layer and spaced apart from the source electrode,

each of the source electrode and the drain electrode comprising;

a wire layer comprising a metal; and

a protective layer on the wire layer,

wherein the protective layer comprises zinc oxide in an amount greater than about 70% by weight and less than about 85% by weight and indium oxide in an amount greater than about 15% by weight and less than about 30% by weight.

2. The thin film transistor substrate of claim 1, wherein the semiconductor layer comprises an oxide semiconductor.

3. The thin film transistor substrate of claim 2, wherein the metal comprises copper or a copper alloy.

4. The thin film transistor substrate of claim 1, wherein each of the source electrode and the drain electrode further comprises a barrier layer between the semiconductor layer and the wire layer, the barrier layer blocking diffusion of a material included in the wire layer to the semiconductor layer.

5. The thin film transistor substrate of claim 4, wherein the barrier layer comprises at least one of indium-zinc-oxide, gallium-zinc oxide and aluminum-zinc oxide.

6. A display apparatus comprising:

a thin film transistor substrate;

an opposite substrate facing the thin film transistor substrate; and

a liquid crystal layer between the thin film transistor substrate and the opposite substrate,

the thin film transistor substrate comprising;

a base substrate; and

a thin film transistor on the base substrate, the thin film transistor comprising;

a gate electrode on the base substrate,

a semiconductor layer on the gate electrode and comprising an oxide semiconductor, and

an electrode layer partially overlapping the semiconductor layer, the electrode layer comprising;

a wire layer comprising a metal; and

a protective layer on the wire layer,

wherein the protective layer comprises zinc oxide in an amount greater than about 70% by weight and less than about 85% by weight and indium oxide in an amount greater than about 15% by weight and less than about 30% by weight.

7. The display apparatus of claim 6, wherein the electrode layer comprises a source electrode and a drain electrode spaced apart from each other.

8. The display apparatus of claim 7, wherein the electrode layer further comprises a barrier layer between the wire layer and the semiconductor layer, the barrier layer comprising at least one of indium-zinc oxide, gallium-zinc oxide and aluminum-zinc oxide.

9. The display apparatus of claim 6, further comprising:

a gate line on the base substrate, elongated in a first direction and connected to the gate electrode; and

a data line on the base substrate, elongated in a second direction crossing the first direction and connected to the electrode layer.