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Semiconductor substrate, semiconductor device, and manufacturing methods thereof

  • US 10,128,403 B2
  • Filed: 07/03/2017
  • Issued: 11/13/2018
  • Est. Priority Date: 06/10/2009
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor substrate, the method comprising:

  • forming a first layer on a substrate;

    patterning the first layer to form a plurality of patterns spaced apart from one another;

    forming a second layer on the patterns to cover the entire upper surface of each of the patterns;

    heat-treating the second layer to form cavities in the patterns between the second layer and the substrate; and

    growing the second layer covering the cavities.

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