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Optoelectronic component and method for the production thereof

  • US 10,128,405 B2
  • Filed: 06/03/2009
  • Issued: 11/13/2018
  • Est. Priority Date: 06/06/2008
  • Status: Active Grant
First Claim
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1. A method of producing an optoelectronic component, comprising the steps of:

  • A) providing a growth substrate;

    B1) growing a semiconductor layer sequence epitaxially comprising a plurality of semiconductor layers and an operationally active zone;

    B2) applying a low refractive index dielectric to the semiconductor layer sequence;

    B3) structuring the low refractive index dielectric so that the low refractive index dielectric is removed in sub-regions;

    C1) applying a metallic mirror layer to the semiconductor layer sequence and to the low refractive index dielectric so that a side of the metallic mirror layer facing the semiconductor layer sequence is structured and the metallic mirror layer penetrates the low refractive index dielectric in the sub-regions where the low refractive index dielectric has been removed so that the metallic mirror layer extends as far as the semiconductor layer sequence;

    C2) removing a sub-region of the metallic mirror layer and applying a diffusion barrier layer to the metallic mirror layer so that the diffusion barrier layer extends as far as the low refractive index dielectric;

    D) applying at least one contact layer for electronic contacting of the component;

    E) detaching the growth substrate from the semiconductor layer sequence, for exposing a surface of the at least one semiconductor layer; and

    F) structuring the semiconductor layer sequence via an etching method from the side of the surface which was exposed in method step E), wherein trenches are produced, by means of which the semiconductor layer sequence is subdivided into a plurality of sub-regions, wherein the trenches penetrate the semiconductor layer sequence in a direction towards the metallic mirror layer completely.

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