Light emitting device

• US 10,128,412 B2
• Filed: 04/20/2016
• Issued: 11/13/2018
• Est. Priority Date: 12/26/2011
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Na, Min Gyu, Choo, Sung Ho, Ju, Hyun Seoung, Hong, Gi Seok, No, Ji Hee
• Primary Examiner(s): Nicely, Joseph C
• Assistant Examiner(s): Goodwin, David
• Application Number:
  US15/134,145
• Publication Number:
  US 20160233384A1
• Time in Patent Office: 937 Days
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer

Abstract

A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed, and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.

Claims

1. A light emitting device comprising:

a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer;

a light-transmissive conductive layer disposed on a first portion of the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed;

a light-transmissive insulating layer on the light-transmissive conductive layer;

a first electrode connected to the first conductive-type semiconductor layer; and

a second electrode disposed on the light-transmissive conductive layer to extend beyond at least one of the open regions, wherein the second electrode includes a second pad electrode and two second branch electrodes branching from the second electrode pad,

wherein the first electrode includes a first electrode pad, a first branch electrode branching from the first electrode pad and interposed between the two second branch electrodes, and a plurality of through electrodes in electrical contact with the first conductive-type semiconductor layer, the plurality of through electrodes being formed to extend through the light-transmissive insulating layer, the light-transmissive conductive layer, the second conductive-type semiconductor layer, and the active layer,

wherein the first branch electrode and the two second branch electrodes are disposed in a first direction, the light-transmissive conductive layer exposed by openings of the light-transmissive insulating layer is disposed in a second direction, and the first direction and the second direction are arranged to cross each other,

wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions,

wherein the two second branch electrodes are disposed to face each other, and at least one region in which each of the two second branch electrodes and the second conductive-type semiconductor layer are connected via the light-transmissive conductive layer is disposed between the open regions,

wherein the light-transmissive conductive layer and the plurality of through electrodes are disposed alternatively in the first direction,

wherein an upper surface of the second branch electrodes has irregularities, and

wherein a height of the second branch electrodes in a connection region with the light-transmissive conductive layer is greater than a height of the second branch electrodes in a region contacting the second conductive-type semiconductor layer.

2. The light emitting device according to claim 1, wherein the second electrode is in ohmic contact with the light-transmissive conductive layer and is in schottky contact with the second conductive-type semiconductor layer.

3. The light emitting device according to claim 1, wherein the second electrode is in ohmic contact with the light-transmissive conductive layer and is in schottky contact with the second conductive-type semiconductor layer.

4. The light emitting device according to claim 1, wherein at least a portion of the first electrode is interposed between at least a portion of the open regions.

5. The light emitting device according to claim 1, wherein the light-transmitting insulating layer is opened in a region where the light-transmissive conductive layer is opened, and wherein the second electrode pad is disposed in the region the light-transmitting insulating layer is opened.

6. The light emitting device according to claim 1, wherein the at least one region includes at least two regions for each of the two second branch electrodes in which the light-transmissive conductive layer is connected between the second branch electrode and the second conductive-type semiconductor layer.

7. The light emitting device according to claim 1, wherein an area of the second branch electrode contacting the second conductive-type semiconductor layer is wider than an area of the second branch electrode connected to the light-transmissive conductive layer.

8. The light emitting device according to claim 1, wherein the at least one region formed for each of the two second branch electrodes in a region excluding the open regions is disposed to correspond to each other.

9. The light emitting device according to claim 1, wherein the first branch electrode is disposed on the light-transmissive insulating layer.

10. The light emitting device according to claim 9, wherein the at least one region formed in a region excluding the open regions does not overlap with the through electrode.

11. The light emitting device according to claim 10, wherein the light-transmissive insulating layer is disposed to extend around the through electrode through the light-transmissive conductive layer, the second conductive-type semiconductor layer, and the active layer.

12. The light emitting device according to claim 1, wherein the open regions through which the second conductive-type semiconductor layer is exposed have a width of 3 μ

m to 5 μ

m.

13. The light emitting device according to claim 1, wherein the second branch electrode has a width of 2 μ

m to 4 μ

m.

14. The light emitting device according to claim 5, wherein the light-transmissive insulating layer comprises SiO₂ or Si₃N₄.

15. The light emitting device according to claim 1, wherein a height of the highest point of the second electrode pad is greater than a height of a surface of the light-transmissive insulating layer.