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Memory element and memory device

  • US 10,128,435 B2
  • Filed: 02/18/2016
  • Issued: 11/13/2018
  • Est. Priority Date: 09/06/2010
  • Status: Active Grant
First Claim
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1. A storage element comprising:

  • a first layer having a magnetization state of a first magnetic material;

    a second layer having a fixed magnetization state of a second magnetic material;

    an intermediate layer including a nonmagnetic material and being interposed between the first layer and the second layer;

    wherein the first layer is configured to store information according to the magnetization state of the first magnetic material,wherein a magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer,wherein the first magnetic material includes Co, Fe, and B, where the amount of B ranges from greater than 20 at % to 40 at %, and where the amount of Fe ranges from 36 at % to less than 80 at %, andwherein a ratio of Co and Fe in the first magnetic material which includes the Co, Fe and B is 7 to 3.

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