Semiconductor image sensor module and method of manufacturing the same
First Claim
1. An imaging device, comprising:
- a first substrate including a plurality of pixels, a first pixel of the plurality of pixels including a photoelectric converter, a wiring layer, and a plurality of transistors electrically connected to the photoelectric converter and the wiring layer;
a second substrate bonded to the first substrate, the second substrate including a plurality of analog/digital converters and a plurality of penetration connectors electrically connected to the plurality of analog/digital converters, the plurality of penetration connectors including a first penetration connector;
a third substrate including a memory circuit; and
a plurality of bumps including a first bump configured to electrically connect the first penetration connector to the memory circuit,wherein the first substrate, the second substrate, and the third substrate are stacked and electrically connected to one another.
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Abstract
A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.
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Citations
18 Claims
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1. An imaging device, comprising:
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a first substrate including a plurality of pixels, a first pixel of the plurality of pixels including a photoelectric converter, a wiring layer, and a plurality of transistors electrically connected to the photoelectric converter and the wiring layer; a second substrate bonded to the first substrate, the second substrate including a plurality of analog/digital converters and a plurality of penetration connectors electrically connected to the plurality of analog/digital converters, the plurality of penetration connectors including a first penetration connector; a third substrate including a memory circuit; and a plurality of bumps including a first bump configured to electrically connect the first penetration connector to the memory circuit, wherein the first substrate, the second substrate, and the third substrate are stacked and electrically connected to one another. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification