MEMS devices having tethering structures

• US 10,131,541 B2
• Filed: 07/21/2016
• Issued: 11/20/2018
• Est. Priority Date: 07/21/2016
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chu, Chia-Hua
• Primary Examiner(s): Hargrove, Frederick B
• Application Number:
  US15/215,753
• Publication Number:
  US 20180022603A1
• Time in Patent Office: 852 Days
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81C 1/00825 Protect against mechanical threats, e.g. against shocks, or residues B81C1/00261 take precedence
• CPC Class Codes: B81C 1/00873 characterised by special arrangements of the devices, allowing an easier separation
• CPC Class Codes: B81C 2201/0194 the layer being structured
• CPC Class Codes: B81C 2203/054 using structural alignment aids, e.g. spacers, interposers, male/female parts, rods or balls
• CPC Class Codes: B81C 99/008 separating the processed structure from a mother substrate

Abstract

The present disclosure relates to a method for fabricating a micro-electromechanical system (MEMS) device. In the method, a carrier wafer is received. A MEMS wafer, which includes a plurality of die, is bonded to the carrier wafer. A cavity is formed to separate an upper surface of the carrier wafer from a lower surface of a die of the MEMS wafer. A separation trench is formed to laterally surround the die, wherein formation of the cavity and the separation trench leaves a tethering structure suspending the die over the upper surface of the carrier wafer. The die and carrier wafer are translated with respect to one another to break the tethering structure and separate the die from the carrier wafer.

Claims

1. A method for fabricating a micro-electromechanical system (MEMS) device, the method comprising:

receiving a carrier wafer;

bonding a MEMS wafer, which includes a plurality of die, to the carrier wafer;

forming a cavity separating an upper surface of the carrier wafer from a lower surface of a die of the MEMS wafer;

forming a separation trench that laterally surrounds an outermost sidewall of the die, wherein formation of the cavity and the separation trench leaves a tethering structure suspending the die over the upper surface of the carrier wafer, wherein the tethering structure includes a plurality of projections, wherein each projection of the plurality of projections includes a plurality of layers that are stacked in parallel over one another over the separation trench; and

translating the die and carrier wafer with respect to one another to break the tethering structure and separate the die from the carrier wafer.

2. The method of claim 1, wherein separating the die from the carrier wafer leaves the carrier wafer intact.

3. The method of claim 1, wherein formation of the separation trench leaves an anchor support structure extending upwardly from the upper surface of the carrier wafer, the anchor support structure laterally surrounding the separation trench, and wherein the tethering structure includes a plurality of projections that each extend laterally over the separation trench to suspend the die over the upper surface of the carrier wafer.

4. The method of claim 1, wherein the MEMS wafer, when bonded to the carrier wafer, is initially separated from the carrier wafer by an intermediate oxide layer;

and

wherein the cavity is formed by removing at least some portions of intermediate oxide layer.

5. The method of claim 4, wherein the carrier wafer has a first face and a second face opposite the first face, the intermediate oxide being in contact with the first face, the method further comprising:

affixing tape to the second face of the carrier wafer; and

after the tape has been affixed to the second face of the carrier wafer, translating the die and carrier wafer with respect to one another to break the tethering structure.

6. The method of claim 1, further comprising:

after the MEMS wafer has been bonded to the carrier wafer, reducing a thickness of the MEMS wafer to a desired MEMS substrate thickness.

7. The method of claim 6, wherein the desired MEMS substrate thickness is in a range of 20 μ

m to 400 μ

m.

8. The method of claim 1, wherein the die includes a MEMS microphone having a diaphragm and back plates.

9. The method of claim 1, further comprising:

an intermediate oxide layer is bonded to the carrier wafer, wherein the MEMS wafer is bonded to the intermediate oxide layer;

wherein the die includes a dielectric structure;

etching the carrier wafer, the intermediate oxide layer, and the MEMS wafer to form a recess;

removing a first portion of material from the dielectric structure overlying the recess; and

wherein removing the first portion of material from the dielectric structure includes etching using vapor-phase hydrofluoric acid.

10. A method for fabricating a micro-electromechanical system (MEMS) device, the method comprising:

receiving a carrier wafer bonded to an intermediate oxide layer;

bonding a MEMS wafer to the intermediate oxide layer;

etching the MEMS wafer to form a separation trench that laterally surrounds an outermost sidewall of a MEMS die region of the MEMS wafer;

forming a MEMS structure in or over the MEMS die region, wherein the MEMS structure includes a dielectric structure and a tethering structure, the tethering structure laterally spanning the separation trench to suspend the MEMS die region over the carrier wafer;

etching the carrier wafer, the intermediate oxide layer, and the MEMS wafer to form a recess;

removing a first portion of material from the dielectric structure overlying the recess;

wherein removing the first portion of material from the dielectric structure includes etching using vapor-phase hydrofluoric acid; and

plucking the MEMS die region from the carrier wafer by breaking the tethering structure.

11. The method of claim 10, wherein the tethering structure includes a plurality of projections that are stacked in parallel over one another over the separation trench.

12. The method of claim 11, wherein the MEMS wafer has a thickness in a range of 20 μ

m to 400 μ

m.

13. The method of claim 10, wherein after the separation trench has been formed, an anchor support structure extends upwards from an upper surface of the carrier wafer and laterally surrounds the separation trench, and wherein the tethering structure includes a plurality of projections that each extend over the separation trench to suspend the MEMS structure over the upper surface of the carrier wafer.

14. The method of claim 10, wherein the carrier wafer has a first face and a second face opposite the first face, the intermediate oxide being in contact with the first face, the method further comprising:

affixing tape to the second face of the carrier wafer; and

after the tape has been affixed to the second face of the carrier wafer, translating the MEMS structure with respect to the carrier wafer to break the tethering structure.

15. The method of claim 10, wherein the MEMS structure is MEMS microphone having a diaphragm and back plates.

16. A method for fabricating a micro-electromechanical system (MEMS) device, the method comprising:

receiving a carrier wafer;

bonding a MEMS wafer, which includes a plurality of die, to the carrier wafer;

forming a cavity separating an upper surface of the carrier wafer from a lower surface of a die of the MEMS wafer;

forming a separation trench that laterally surrounds an outermost edge of the die, wherein formation of the cavity and the separation trench leaves a tethering structure suspending the die over the upper surface of the carrier wafer, wherein the tethering structure includes a plurality of projections that each extend laterally over the separation trench to suspend the die over the upper surface of the carrier wafer, wherein each projection of the plurality of projections includes a plurality of layers that are stacked in parallel over one another over the separation trench; and

translating the die and carrier wafer with respect to one another to break the tethering structure and separate the die from the carrier wafer leaving the carrier wafer intact.

17. The method of claim 16, wherein formation of the separation trench leaves an anchor support structure extending upwardly from the upper surface of the carrier wafer, the anchor support structure laterally surrounding the separation trench.

18. The method of claim 16, wherein the MEMS wafer, when bonded to the carrier wafer, is initially separated from the carrier wafer by an intermediate oxide layer;

and

wherein the cavity is formed by removing at least some portions of intermediate oxide layer.

19. The method of claim 18, wherein the carrier wafer has a first face and a second face opposite the first face, the intermediate oxide layer being in contact with the first face, the method further comprising:

affixing tape to the second face of the carrier wafer; and

after the tape has been affixed to the second face of the carrier wafer, translating the die and carrier wafer with respect to one another to break the tethering structure.

20. The method of claim 16, further comprising:

after the MEMS wafer has been bonded to the carrier wafer, reducing a thickness of the MEMS wafer to a desired MEMS substrate thickness.