MEMS devices having tethering structures
First Claim
1. A method for fabricating a micro-electromechanical system (MEMS) device, the method comprising:
- receiving a carrier wafer;
bonding a MEMS wafer, which includes a plurality of die, to the carrier wafer;
forming a cavity separating an upper surface of the carrier wafer from a lower surface of a die of the MEMS wafer;
forming a separation trench that laterally surrounds an outermost sidewall of the die, wherein formation of the cavity and the separation trench leaves a tethering structure suspending the die over the upper surface of the carrier wafer, wherein the tethering structure includes a plurality of projections, wherein each projection of the plurality of projections includes a plurality of layers that are stacked in parallel over one another over the separation trench; and
translating the die and carrier wafer with respect to one another to break the tethering structure and separate the die from the carrier wafer.
1 Assignment
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Accused Products
Abstract
The present disclosure relates to a method for fabricating a micro-electromechanical system (MEMS) device. In the method, a carrier wafer is received. A MEMS wafer, which includes a plurality of die, is bonded to the carrier wafer. A cavity is formed to separate an upper surface of the carrier wafer from a lower surface of a die of the MEMS wafer. A separation trench is formed to laterally surround the die, wherein formation of the cavity and the separation trench leaves a tethering structure suspending the die over the upper surface of the carrier wafer. The die and carrier wafer are translated with respect to one another to break the tethering structure and separate the die from the carrier wafer.
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Citations
20 Claims
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1. A method for fabricating a micro-electromechanical system (MEMS) device, the method comprising:
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receiving a carrier wafer; bonding a MEMS wafer, which includes a plurality of die, to the carrier wafer; forming a cavity separating an upper surface of the carrier wafer from a lower surface of a die of the MEMS wafer; forming a separation trench that laterally surrounds an outermost sidewall of the die, wherein formation of the cavity and the separation trench leaves a tethering structure suspending the die over the upper surface of the carrier wafer, wherein the tethering structure includes a plurality of projections, wherein each projection of the plurality of projections includes a plurality of layers that are stacked in parallel over one another over the separation trench; and translating the die and carrier wafer with respect to one another to break the tethering structure and separate the die from the carrier wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for fabricating a micro-electromechanical system (MEMS) device, the method comprising:
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receiving a carrier wafer bonded to an intermediate oxide layer; bonding a MEMS wafer to the intermediate oxide layer; etching the MEMS wafer to form a separation trench that laterally surrounds an outermost sidewall of a MEMS die region of the MEMS wafer; forming a MEMS structure in or over the MEMS die region, wherein the MEMS structure includes a dielectric structure and a tethering structure, the tethering structure laterally spanning the separation trench to suspend the MEMS die region over the carrier wafer; etching the carrier wafer, the intermediate oxide layer, and the MEMS wafer to form a recess; removing a first portion of material from the dielectric structure overlying the recess; wherein removing the first portion of material from the dielectric structure includes etching using vapor-phase hydrofluoric acid; and plucking the MEMS die region from the carrier wafer by breaking the tethering structure. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method for fabricating a micro-electromechanical system (MEMS) device, the method comprising:
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receiving a carrier wafer; bonding a MEMS wafer, which includes a plurality of die, to the carrier wafer; forming a cavity separating an upper surface of the carrier wafer from a lower surface of a die of the MEMS wafer; forming a separation trench that laterally surrounds an outermost edge of the die, wherein formation of the cavity and the separation trench leaves a tethering structure suspending the die over the upper surface of the carrier wafer, wherein the tethering structure includes a plurality of projections that each extend laterally over the separation trench to suspend the die over the upper surface of the carrier wafer, wherein each projection of the plurality of projections includes a plurality of layers that are stacked in parallel over one another over the separation trench; and translating the die and carrier wafer with respect to one another to break the tethering structure and separate the die from the carrier wafer leaving the carrier wafer intact. - View Dependent Claims (17, 18, 19, 20)
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Specification