Display device having a light blocking pattern

• US 10,133,114 B2
• Filed: 01/02/2017
• Issued: 11/20/2018
• Est. Priority Date: 04/04/2016
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Kim, Yoonjang, Im, Wansoon, Kim, Sungryul, Lee, Yunseok
• Primary Examiner(s): Kielin, Erik
• Application Number:
  US15/396,781
• Publication Number:
  US 20170285393A1
• Time in Patent Office: 687 Days
• Field of Search: None
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133512 Light shielding layers, e.g. black matrix G02F1/136209 takes precedence
• CPC Class Codes: G02F 1/1337 Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
• CPC Class Codes: G02F 1/133707 Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
• CPC Class Codes: G02F 1/134309 characterised by their geometrical arrangement
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/121 common or background
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: G02F 2201/40 Arrangements for improving the aperture ratio
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A display device includes: a base substrate including a pixel area at which an image is displayed; a light blocking pattern on the base substrate; a thin film transistor on the light blocking pattern; a gate line connected to the thin film transistor and lengthwise extending in a first direction; a data line connected to the thin film transistor and lengthwise extending in a second direction; and a pixel electrode in the pixel area and spaced apart from the gate line in the second direction. The light blocking pattern includes: a first light blocking pattern lengthwise extending in the first direction; and a second light blocking pattern overlapping the thin film transistor. The first light blocking pattern overlaps the gate line and the pixel electrode spaced apart from each other in the second direction.

Claims

1. A display device comprising:

a base substrate including a plurality of pixel areas at which an image is displayed;

a light blocking pattern on the base substrate;

a thin film transistor on the light blocking pattern;

a pixel electrode in each of the pixel areas, a dimension of the pixel electrode in a first direction being larger than a dimension of the pixel electrode in a second direction crossing the first direction; and

a gate line and a data line each connected to the thin film transistor,

wherein

one line among the gate line and the data line has a length extending along the larger dimension of the pixel electrode,

the other line among the gate line and the data line has a length extending along the smaller dimension of the pixel electrode,

in the second direction;

a first pixel electrode is adjacent to and spaced apart from a second pixel electrode, and

the one line having the length extending along the larger dimension of the pixel electrode is spaced apart from the first pixel electrode and overlaps the second pixel electrode, and

the light blocking pattern comprises;

a first light blocking pattern defining a length thereof extending along the larger dimension of the pixel electrode,

along the second direction, the first light blocking pattern spaced apart from the second pixel electrode and overlapping the pixel electrode and the one line having the length extending along the larger dimension of the pixel electrode; and

a second light blocking pattern of which a portion thereof overlaps the thin film transistor, the second light blocking pattern having first and second edges extending along the second direction between the pixel electrode and the other line having the length extending along the smaller dimension of the pixel electrode,

wherein

the first edge of the second light blocking pattern is adjacent to and spaced apart from the other line having the length extending along the smaller dimension of the pixel electrode,

the second edge of the second light blocking pattern is adjacent to and spaced apart from the pixel electrode, and

the thin film transistor is disposed between the first and second edges of the second light blocking pattern.

2. The display device as claimed in claim 1, wherein the first light blocking pattern is disposed between the one line having the length extending along the larger dimension of the pixel electrode and the first pixel electrode spaced apart therefrom, in a top plan view.

3. The display device as claimed in claim 1, wherein the first light blocking pattern which defines the length thereof along the larger dimension of the pixel electrode, is spaced apart from the second pixel electrode overlapped by the one line having the length extending along the larger dimension of the pixel electrode.

4. The display device as claimed in claim 1, further comprising a black matrix disposed on the thin film transistor and the other line among the gate line and the data line having a length extending along the smaller dimension of the pixel electrode, the black matrix defining a length thereof extending in the second direction.

5. The display device as claimed in claim 1, wherein the one line having the length extending along the larger dimension of the pixel electrode together with the first light blocking pattern defining the length thereof extending along the larger dimension of the pixel electrode overlaps an entirety of a distance in the second direction between the first and second pixel electrodes spaced apart from each other.

6. The display device as claimed in claim 1, wherein

the one line having the length extending along the larger dimension of the pixel electrode is the gate line,

the other line having the length extending along the smaller dimension of the pixel electrode is the data line, and

the thin film transistor comprises:

a semiconductor layer on the base substrate;

a gate electrode branching off from the gate line and disposed on the semiconductor layer;

a source electrode branching off from the data line and connected to the semiconductor layer; and

a drain electrode spaced apart from the source electrode and connected to the semiconductor layer.

7. The display device as claimed in claim 6, wherein the semiconductor layer is disposed respectively between the light blocking pattern, and the source electrode and the drain electrode.

8. The display device as claimed in claim 6, wherein the source electrode and the drain electrode are each disposed between the light blocking pattern and the semiconductor layer.

9. The display device as claimed in claim 6, wherein the semiconductor layer comprises at least one selected from zinc oxide, zinc tin oxide, zinc indium oxide, indium oxide, titanium oxide, indium-gallium-zinc oxide and indium-zinc-tin oxide.

10. The display device as claimed in claim 1, wherein the first light blocking pattern and the second light blocking pattern are connected to each other at an intersecting area therebetween.

11. The display device as claimed in claim 1, wherein the first light blocking pattern and the second light blocking pattern are separated from each other at a virtual intersecting area therebetween.

12. The display device as claimed in claim 1, wherein the pixel electrode comprises a cross-shaped stem portion and a branch portion which extends from the cross-shaped stem portion.

13. The display device as claimed in claim 12, wherein the light blocking pattern further comprises a third light blocking pattern disposed on the base substrate and overlapping the cross-shaped stem portion of the pixel electrode.

14. The display device as claimed in claim 13, wherein the first, second and third light blocking patterns are disposed in a same layer as each other.

15. The display device as claimed in claim 1, wherein

the one line having the length extending along the larger dimension of the pixel electrode is the data line,

the other line having the length extending along the smaller dimension of the pixel electrode is the gate line, and

the thin film transistor comprises:

a semiconductor layer on the base substrate;

a gate electrode branching off from the gate line and disposed on the semiconductor layer;

a source electrode branching off from the data line and connected to the semiconductor layer; and

a drain electrode spaced apart from the source electrode and connected to the semiconductor layer.