Display device

• US 10,133,139 B2
• Filed: 10/10/2014
• Issued: 11/20/2018
• Est. Priority Date: 05/17/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Takayama, Toru, Murakami, Satoshi, Kimura, Hajime
• Primary Examiner(s): Nadav, Ori
• Application Number:
  US14/511,197
• Publication Number:
  US 20150160490A1
• Time in Patent Office: 1,502 Days
• Field of Search: 257 59, 257 72, 257637, 257347
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: G02F 1/136277 formed on a semiconductor substrate, e.g. of silicon
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H05B 33/04 Sealing arrangements , e.g. against humidity
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/87 Passivation; Containers; Encapsulations

Abstract

A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.

Claims

1. A liquid crystal display device comprising:

a semiconductor formed on an insulating surface, the semiconductor comprising a source region, a drain region and a channel forming region;

a first conductive film comprising a region overlapping the channel forming region;

a first silicon nitride film over the semiconductor and the first conductive film;

an organic resin film over the first silicon nitride film;

a second silicon nitride film over the organic resin film; and

a second conductive film over the second silicon nitride film;

wherein the second conductive film comprises a region functioning as a pixel electrode,

wherein the first silicon nitride film comprises a first opening;

wherein the organic resin film comprises a second opening;

wherein the second silicon nitride film comprises a third opening;

wherein a first region where the first silicon nitride film and the second silicon nitride film are in contact with each other is inside the second opening;

wherein the second conductive film is electrically connected to one of the source region and the drain region via the first opening, the second opening, and the third opening, and

wherein the organic resin film comprises an upper surface over a first part of an upper surface of the first silicon nitride film, a second part of the upper surface of the first silicon nitride film being in the first region, and

wherein an upper end portion of a side surface of the organic resin film is round at the second opening.

2. A liquid crystal display device according to claim 1,

wherein the liquid crystal display device comprises a plurality of pixels.

3. A liquid crystal display device according to claim 1,

wherein the second silicon nitride film is a single layer.

4. An electronic device comprising the liquid crystal display device according to claim 1.

5. A liquid crystal display device according to claim 1,

wherein the semiconductor is over a glass substrate.

6. A liquid crystal display device according to claim 1, wherein the organic resin film is formed above the first conductive film to overlap the first conductive film.

7. A liquid crystal display device comprising:

a semiconductor formed on an insulating surface, the semiconductor comprising a source region, a drain region and a channel forming region;

a first conductive film comprising a region overlapping the channel forming region;

a first silicon nitride film over the semiconductor and the first conductive film;

an organic resin film over the first silicon nitride film;

a second silicon nitride film over the organic resin film; and

a second conductive film over the second silicon nitride film;

wherein the second conductive film comprises a region functioning as a pixel electrode,

wherein the first silicon nitride film comprises a first opening;

wherein the organic resin film comprises a second opening;

wherein the second silicon nitride film comprises a third opening;

wherein a first region where the first silicon nitride film and the second silicon nitride film are in contact with each other is inside the second opening;

wherein the second conductive film is electrically connected to one of the source region and the drain region via the first opening, the second opening, and the third opening,

wherein an upper end portion of a side surface of the organic resin film is round at the second opening, and

wherein the side surface of the organic resin film comprises a region covered with the second silicon nitride film, the region being at the second opening.

8. A liquid crystal display device according to claim 7, comprising:

wherein the liquid crystal display device comprises a plurality of pixels.

9. A liquid crystal display device according to claim 7,

wherein the second silicon nitride film is a single layer.

10. An electronic device comprising the liquid crystal display device according to claim 7.

11. A liquid crystal display device according to claim 7,

wherein the semiconductor is over a glass substrate.

12. A liquid crystal display device according to claim 7, wherein the organic resin film is formed above the first conductive film to overlap the first conductive film.

13. A liquid crystal display device comprising:

a semiconductor formed on an insulating surface, the semiconductor comprising a source region, a drain region and a channel forming region;

a first conductive film comprising a region overlapping the channel forming region;

a first silicon nitride film over the semiconductor and the first conductive film;

an organic resin film over the first silicon nitride film;

a second silicon nitride film over the organic resin film; and

a second conductive film over the second silicon nitride film;

wherein the second conductive film comprises a region functioning as a pixel electrode,

wherein the first silicon nitride film comprises a first opening;

wherein the organic resin film comprises a second opening;

wherein the second silicon nitride film comprises a third opening;

wherein a first region where the first silicon nitride film and the second silicon nitride film are in contact with each other is inside the second opening;

wherein the second conductive film is electrically connected to one of the source region and the drain region via the first opening, the second opening, and the third opening,

wherein the organic resin film comprises an upper surface over a part of an upper surface of the first silicon nitride film, a second part of the upper surface of the first silicon nitride film being in the first region, and

wherein the second conductive film comprises a region overlapping the first conductive film, and

wherein an upper end portion of a side surface of the organic resin film is round at the second opening.

14. A liquid crystal display device according to claim 13, comprising:

wherein the liquid crystal display device comprises a plurality of pixels.

15. A liquid crystal display device according to claim 13,

wherein the second silicon nitride film is a single layer.

16. An electronic device comprising the liquid crystal display device according to claim 13.

17. A liquid crystal display device according to claim 13,

wherein the semiconductor is over a glass substrate.

18. A liquid crystal display device according to claim 13, wherein the organic resin film is formed above the first conductive film to overlap the first conductive film.

19. A display device comprising:

a semiconductor formed on an insulating surface, the semiconductor comprising a source region, a drain region and a channel forming region;

a first conductive film comprising a region overlapping the channel forming region;

a first silicon nitride film over the semiconductor and the first conductive film;

an organic resin film over the first silicon nitride film;

a second silicon nitride film over the organic resin film; and

a second conductive film over the second silicon nitride film;

wherein the second conductive film comprises a region functioning as a pixel electrode,

wherein the first silicon nitride film comprises a first opening;

wherein the organic resin film comprises a second opening;

wherein the second silicon nitride film comprises a third opening;

wherein a first region where the first silicon nitride film and the second silicon nitride film are in contact with each other is inside the second opening;

wherein the second conductive film is electrically connected to one of the source region and the drain region via the first opening, the second opening, and the third opening, and

wherein the organic resin film comprises an upper surface which is obliquely above a first part of an upper surface of the first silicon nitride film, the first part of the upper surface of the first silicon nitride film being in the first region, and

wherein an upper end portion of a side surface of the organic resin film is round at the second opening.

20. A display device according to claim 19, wherein the organic resin film is formed above the first conductive film to overlap the first conductive film.