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Cobalt top layer advanced metallization for interconnects

  • US 10,134,675 B2
  • Filed: 11/15/2017
  • Issued: 11/20/2018
  • Est. Priority Date: 08/17/2016
  • Status: Active Grant
First Claim
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1. An integrated circuit device comprising:

  • a substrate including a dielectric layer patterned with a pattern includes a set of features in the dielectric layer for a set of metal conductor structures;

    an adhesion promoting layer disposed on the set of features in the patterned dielectric layer;

    a metal layer filling a first portion of the set of features disposed on the adhesion promoting layer;

    a ruthenium layer disposed on the metal layer, wherein the ruthenium layer comprises a nitrogen enriched surface layer; and

    a cobalt layer disposed on the ruthenium layer filling a second portion of the set of features, the second portion a remainder portion of the set of features not filled by the adhesion promoting layer, the metal layer and the ruthenium layer, wherein the cobalt layer is completely formed using a physical vapor deposition process.

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