Substrateless light emitting diode (LED) package for size shrinking and increased resolution of display device

• US 10,134,709 B1
• Filed: 12/21/2017
• Issued: 11/20/2018
• Est. Priority Date: 12/21/2017
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Wu, Ming-Hsien, Tsai, Yao-Jun, Chao, Chia-Hsin, Fang, Yen-Hsiang, Lin, Yi-Chen, Yeh, Ching-Ya
• Primary Examiner(s): Tran, Andrew Q
• Application Number:
  US15/849,692
• Time in Patent Office: 334 Days
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting diode package including a circuit layer, a light-shielding layer, a plurality of light emitting diodes and an encapsulation layer is provided. A thickness of the circuit layer is less than 100 μm. The light-shielding layer is disposed on a first surface of the circuit layer and the light-shielding layer has a plurality of apertures. The light emitting diodes are disposed on the first surface of the circuit layer and in the apertures of the light-shielding layer. The light emitting diodes are electrically connected to the circuit layer. The encapsulation layer covers the light-shielding layer. A refractive index of the encapsulation layer is 1.4 and to 1.7. The Young'"'"'s modulus of the encapsulation layer is larger than or equal to 1 GPa. A thickness of the encapsulation layer is greater than thicknesses of the light emitting diodes.

Claims

1. A light emitting diode package, comprising:

a circuit layer, having a thickness of less than 100 micrometers;

a light-shielding layer, disposed on the circuit layer and having a plurality of apertures;

a plurality of light emitting diodes, disposed on the circuit layer and in the plurality of apertures of the light-shielding layer and electrically connected to the circuit layer; and

an encapsulation layer, covering the light-shielding layer, wherein a refractive index of the encapsulation layer is 1.4 to 1.7, a Young'"'"'s modulus of the encapsulation layer is greater than or equal to 1 GPa, and a thickness of the encapsulation layer is greater than thicknesses of the plurality of light emitting diodes.

2. The light emitting diode package according to claim 1, further comprising:

a plurality of connecting pads, wherein the plurality of connecting pads and the plurality of light emitting diodes are disposed on different sides of the circuit layer, a number of the plurality of connecting pads is greater than a number of the plurality of light emitting diodes, and a difference between the number of plurality of connecting pads and the number of the plurality of light emitting diodes is 1.

3. The light emitting diode package according to claim 1, further comprising:

a plurality of light conversion layers, disposed corresponding to parts of the plurality of light emitting diodes.

4. The light emitting diode package according to claim 1, further comprising:

a device layer, disposed on the circuit layer and comprising a plurality of active devices electrically connected to the plurality of corresponding light emitting diodes.

5. The light emitting diode package according to claim 4, wherein the light-shielding layer covers the device layer.

6. The light emitting diode package according to claim 4, wherein the plurality of apertures of the light-shielding layer expose a part of the device layer.

7. The light emitting diode package according to claim 4, further comprising:

a plurality of connecting pads, wherein the plurality of connecting pads and the plurality of light emitting diodes are disposed on different sides of the circuit layer, a number of the plurality of connecting pads is greater than a number of the plurality of light emitting diodes, and a difference between the number of the plurality of connecting pads and the number of the plurality of light emitting diodes is 3.

8. The light emitting diode package according to claim 1, wherein the encapsulation layer is further filled in the plurality of apertures.

9. The light emitting diode package according to claim 1, wherein the light-shielding layer comprises a through-hole, and the light emitting diode package further comprises:

a dielectric layer, filled in the plurality of apertures to cover the circuit layer exposed by the plurality of apertures;

a plurality of connecting pads, wherein the plurality of connecting pads and the plurality of light emitting diodes are disposed on different sides of the circuit layer; and

a transparent electrode layer, disposed on the light-shielding layer, the plurality of light emitting diodes and the dielectric layer and filled in the through-hole, wherein one of the plurality of connecting pads is electrically connected to the plurality of light emitting diodes through the transparent electrode layer.

10. The light emitting diode package according to claim 1 wherein the package is a substrateless package.