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Method of processing a substrate and a device manufactured by using the method

  • US 10,134,757 B2
  • Filed: 06/30/2017
  • Issued: 11/20/2018
  • Est. Priority Date: 11/07/2016
  • Status: Active Grant
First Claim
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1. A method of processing a substrate, the method comprising:

  • stacking a stacked structure including a silicon oxide layer and a first silicon nitride layer a plurality of number of times;

    forming a second silicon nitride layer on the first silicon nitride layer;

    forming a third silicon nitride layer on the second silicon nitride layer;

    densifying the third silicon nitride layer;

    wet-etching at least a portion of a sacrificial word line structure including the first silicon nitride layer, the second silicon nitride layer, and the third silicon nitride layer;

    forming an interlayer insulation layer on the sacrificial word line structure;

    removing the sacrificial word line structure; and

    forming a conductive word line structure corresponding to a space from which the sacrificial word line structure has been removed.

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