Capacitor and semiconductor device
First Claim
Patent Images
1. A semiconductor device comprising:
- a transistor comprising;
a gate electrode;
a first insulating film over the gate electrode;
an oxide semiconductor film including a channel region on the first insulating film; and
a source electrode and a drain electrode connected to the oxide semiconductor film;
an oxide insulating film over and in contact with the channel region and over the source electrode and the drain electrode;
a metal oxide film over the oxide insulating film;
a light-transmitting conductive film over the metal oxide film; and
a capacitor comprising;
a first electrode;
the metal oxide film serving as a dielectric film over in contact with the first electrode; and
the light-transmitting conductive film as a second electrode over the metal oxide film,wherein the oxide semiconductor film and the first electrode contain a same material, andwherein the first electrode has a higher hydrogen concentration than the oxide semiconductor film.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device has an insulating surface provided with a transistor and a capacitor. The transistor includes a gate electrode, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film between the gate electrode and the oxide semiconductor film, and a first conductive film serving as a pair of electrodes in contact with the oxide semiconductor film. An oxide insulating film in contact with the oxide semiconductor film, a metal oxide film over the oxide insulating film, and a second conductive film serving as a pixel electrode which is in an opening in the metal oxide film and is in contact with the first conductive film are provided. The capacitor includes a film having conductivity over the gate insulating film, the second conductive film, and the metal oxide film provided between the film having conductivity and the second conductive film.
155 Citations
38 Claims
-
1. A semiconductor device comprising:
-
a transistor comprising; a gate electrode; a first insulating film over the gate electrode; an oxide semiconductor film including a channel region on the first insulating film; and a source electrode and a drain electrode connected to the oxide semiconductor film; an oxide insulating film over and in contact with the channel region and over the source electrode and the drain electrode; a metal oxide film over the oxide insulating film; a light-transmitting conductive film over the metal oxide film; and a capacitor comprising; a first electrode; the metal oxide film serving as a dielectric film over in contact with the first electrode; and the light-transmitting conductive film as a second electrode over the metal oxide film, wherein the oxide semiconductor film and the first electrode contain a same material, and wherein the first electrode has a higher hydrogen concentration than the oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 16, 18, 20, 22, 24, 26)
-
-
7. A semiconductor device comprising:
-
a transistor comprising; a gate electrode; a first insulating film over the gate electrode; an oxide semiconductor film including a channel region on the first insulating film; and a source electrode and a drain electrode connected to the oxide semiconductor film; an oxide insulating film over and in contact with the channel region and over the source electrode and the drain electrode; a stacked film comprising a metal oxide film and a nitride insulating film over the oxide insulating film; a light-transmitting conductive film over the stacked film; and a capacitor comprising; a first electrode; the stacked film serving as a dielectric film of the capacitor over in contact with the first electrode; and the light-transmitting conductive film as a second electrode over the stacked film, wherein the oxide semiconductor film and the first electrode contain a same material, and wherein the first electrode has a higher hydrogen concentration than the oxide semiconductor film. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 17, 19, 21, 23, 25, 27)
-
-
28. A semiconductor device comprising:
-
a transistor comprising; a gate electrode; a first insulating film over the gate electrode; an oxide semiconductor film including a channel region on the first insulating film; and a source electrode and a drain electrode connected to the oxide semiconductor film; an oxide insulating film over and in contact with the channel region and over the source electrode and the drain electrode; a metal oxide film over the oxide insulating film; a light-transmitting conductive film over the metal oxide film; and a capacitor comprising; a first electrode; the metal oxide film serving as a dielectric film in contact with the first electrode; and the light-transmitting conductive film as a second electrode over the metal oxide film, wherein the oxide semiconductor film and the first electrode contain a same material. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
InventorsYamazaki, Shunpei, Koezuka, Junichi, Katayama, Masahiro, Jintyou, Masami
-
Primary Examiner(s)Campbell, Shaun
-
Application NumberUS14/462,994Publication NumberTime in Patent Office1,554 DaysField of Search257 43, 438104US Class CurrentCPC Class CodesH01L 27/1225 with semiconductor material...H01L 27/1255 integrated with passive dev...H01L 29/94 Metal-insulator-semiconduct...
