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Semiconductor device having an active trench and a body trench

  • US 10,134,885 B2
  • Filed: 05/12/2017
  • Issued: 11/20/2018
  • Est. Priority Date: 03/12/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device formed in a semiconductor substrate including a first main surface, comprising:

  • a drift region of a first conductivity type;

    a body region between the drift region and the first main surface;

    a first transistor cell and a second transistor cell, each of the first and the second transistor cells comprising;

    an active trench at the first main surface and extending into the drift region;

    a gate conductive layer disposed in the active trench; and

    a source region formed in the body region adjacent to the active trench,the semiconductor device further comprising a first body trench and a second body trench, the first body trench and the second body trench being arranged adjacent to each other between the first and the second transistor cells such that no active trenches are interposed between the first and the second body trenches, the first and the second body trenches being formed in the first main surface and extending into the drift region, at least one of the first and the second body trenches being different from the active trench in shape.

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