Quantum dot LED package structure

• US 10,134,962 B2
• Filed: 04/19/2017
• Issued: 11/20/2018
• Est. Priority Date: 03/30/2017
• Status: Active Grant

• Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd. (TCL Technology Group Corp.)
• Original Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd. (TCL Technology Group Corp.)
• Inventors: Fan, Yong
• Primary Examiner(s): Lebentritt, Michael
• Application Number:
  US15/529,507
• Publication Number:
  US 20180309032A1
• Time in Patent Office: 580 Days
• Field of Search: None
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/641 characterized by the materials

Abstract

Provided is a quantum dot LED package structure comprising a bottom bracket, an external bracket, a quantum dot layer light emitting chip, an inorganic barrier layer and a top silica gel layer, wherein the inorganic barrier layer covers the external bracket and the quantum dot layer light emitting chip on the bottom bracket to package the external bracket and the quantum dot layer light emitting chip; the external bracket and the quantum dot layer light emitting chip are packaged by using the inorganic barrier layer, and a top silica gel layer is provided on the inorganic barrier layer, and the water and oxygen barrier condition that the existing package structure simply using the silica gel layer cannot meet can be satisfied and good heat dissipation can be provided. Thus, the issues of mass production difficulty, high cost, low luminous efficiency, difficulty to achieve narrow border application can be solved.

Claims

1. A quantum dot LED package structure, comprising a bottom bracket, an external bracket, a quantum dot layer light emitting chip, an inorganic barrier layer and a top silica gel layer;

the quantum dot layer light emitting chip being provided on the bottom bracket;

the external bracket being provided on the bottom bracket and surrounding the quantum dot layer light emitting chip;

the inorganic barrier layer covering the external bracket and the quantum dot layer light emitting chip on the bottom bracket to package the external bracket and the quantum dot layer light emitting chip;

the top silica gel layer being provided on the inorganic barrier layer.

2. The quantum dot LED package structure according to claim 1, wherein a material of the inorganic barrier layer is SiO₂, AlN, SiAlN or Al₂O₃.

3. The quantum dot LED package structure according to claim 1, wherein the inorganic barrier layer is formed by a low temperature sputtering method, a plasma enhanced chemical vapor deposition method or a thermal evaporation method.

4. The quantum dot LED package structure according to claim 1, wherein the quantum dot layer light emitting chip comprises a blue light emitting chip, a first insulation layer, a quantum dot layer, and a second insulation layer, which are provided on the bottom bracket from bottom to top in order.

5. The quantum dot LED package structure according to claim 4, wherein the quantum dot layer comprises two quantum dot materials, which respectively are a red quantum dot material and a green quantum dot material.

6. The quantum dot LED package structure according to claim 4, wherein the quantum dot layer comprises a quantum dot material, which is a green quantum dot material;

the top silica gel layer is a silica gel layer comprising a KSF phosphorescent material.

7. The quantum dot LED package structure according to claim 4, wherein a material of the first insulation layer and the second insulation layer is silica gel or glass.

8. The quantum dot LED package structure according to claim 4, wherein the bottom bracket comprises a first metal bracket and a second metal bracket spaced apart from each other, and an insulation bracket positioned between the first metal bracket and the second metal bracket;

the first metal bracket and the second metal bracket are respectively connected with an electrode positive and a negative electrode of the blue light emitting chip.

9. The quantum dot LED package structure according to claim 8, wherein a material of the external bracket and the insulation bracket is an epoxy molding compound or a ceramic.

10. The quantum dot LED package structure according to claim 4, wherein the blue light emitting chip is a flip chip.

11. A quantum dot LED package structure, comprising a bottom bracket, an external bracket, a quantum dot layer light emitting chip, an inorganic barrier layer and a top silica gel layer;

the quantum dot layer light emitting chip being provided on the bottom bracket;

the external bracket being provided on the bottom bracket and surrounding the quantum dot layer light emitting chip;

the inorganic barrier layer covering the external bracket and the quantum dot layer light emitting chip on the bottom bracket to package the external bracket and the quantum dot layer light emitting chip;

the top silica gel layer being provided on the inorganic barrier layer;

wherein the inorganic barrier layer is formed by a low temperature sputtering method, a plasma enhanced chemical vapor deposition method or a thermal evaporation method;

wherein the quantum dot layer light emitting chip comprises a blue light emitting chip, a first insulation layer, a quantum dot layer, and a second insulation layer, which are provided on the bottom bracket from bottom to top in order.

12. The quantum dot LED package structure according to claim 11, wherein a material of the inorganic barrier layer is SiO₂, AlN, SiAlN or Al₂O₃.

13. The quantum dot LED package structure according to claim 11, wherein the quantum dot layer comprises two quantum dot materials, which respectively are a red quantum dot material and a green quantum dot material.

14. The quantum dot LED package structure according to claim 11, wherein the quantum dot layer comprises a quantum dot material, which is a green quantum dot material;

the top silica gel layer is a silica gel layer comprising a KSF phosphorescent material.

15. The quantum dot LED package structure according to claim 11, wherein a material of the first insulation layer and the second insulation layer is silica gel or glass.

16. The quantum dot LED package structure according to claim 11, wherein the bottom bracket comprises a first metal bracket and a second metal bracket spaced apart from each other, and an insulation bracket positioned between the first metal bracket and the second metal bracket;

the first metal bracket and the second metal bracket are respectively connected with an electrode positive and a negative electrode of the blue light emitting chip.

17. The quantum dot LED package structure according to claim 16, wherein a material of the external bracket and the insulation bracket is an epoxy molding compound or a ceramic.

18. The quantum dot LED package structure according to claim 11, wherein the blue light emitting chip is a flip chip.