Pulsed level shift and inverter circuits for GaN devices
First Claim
Patent Images
1. A level shift circuit, comprising:
- a first inverter circuit comprising;
a first input terminal;
a first output terminal;
a first GaN-based transistor having a gate coupled to the first input terminal, a drain coupled to the first output terminal, and a source coupled to a ground; and
a first pull up device coupled between the drain of the first GaN-based transistor and a power supply, wherein the first pull up device is configured to selectively conduct current from the power supply to the output terminal, wherein the first pull up device comprises a second GaN-based transistor having a gate driven with a voltage based on the voltage at the first output terminal, and wherein the first and second GaN-based transistors are of the same conductivity type.
3 Assignments
0 Petitions
Accused Products
Abstract
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
189 Citations
7 Claims
-
1. A level shift circuit, comprising:
a first inverter circuit comprising; a first input terminal; a first output terminal; a first GaN-based transistor having a gate coupled to the first input terminal, a drain coupled to the first output terminal, and a source coupled to a ground; and a first pull up device coupled between the drain of the first GaN-based transistor and a power supply, wherein the first pull up device is configured to selectively conduct current from the power supply to the output terminal, wherein the first pull up device comprises a second GaN-based transistor having a gate driven with a voltage based on the voltage at the first output terminal, and wherein the first and second GaN-based transistors are of the same conductivity type. - View Dependent Claims (2, 3, 4, 5, 6, 7)
Specification