Spin torque oscillator with high power output and its applications
First Claim
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1. A spin torque oscillator comprising:
- a first magnetic reference layer having a fixed magnetization;
a magnetic precession layer having a magnetization capable of precessing about an initial direction; and
a first barrier layer interposed between the first magnetic reference layer and the magnetic precession layer, the first barrier layer being formed of an insulating material capable of inducing a negative differential resistance for the spin torque oscillator;
wherein the first barrier layer is formed of a material AB having a cubic crystal structure where A represents cation sites and B represents anion sites in the cubic crystal structure, the cation sites A are occupied disorderly by at least two of Mg, Al, Zn and vacancy, and the anion sites B are occupied by one or more of O, N, Cl, F and vacancy.
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Abstract
The present invention relates to a spin torque oscillator with high power output and its applications. A spin torque oscillator may include a first magnetic reference layer having a fixed magnetization, a magnetic precession layer having a magnetization capable of precessing about an initial direction, and a first barrier layer interposed between the first magnetic reference layer and the magnetic precession layer. The first barrier layer is formed of an insulating material capable of inducing a negative differential resistance for the spin torque oscillator.
19 Citations
15 Claims
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1. A spin torque oscillator comprising:
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a first magnetic reference layer having a fixed magnetization; a magnetic precession layer having a magnetization capable of precessing about an initial direction; and a first barrier layer interposed between the first magnetic reference layer and the magnetic precession layer, the first barrier layer being formed of an insulating material capable of inducing a negative differential resistance for the spin torque oscillator; wherein the first barrier layer is formed of a material AB having a cubic crystal structure where A represents cation sites and B represents anion sites in the cubic crystal structure, the cation sites A are occupied disorderly by at least two of Mg, Al, Zn and vacancy, and the anion sites B are occupied by one or more of O, N, Cl, F and vacancy. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A spin torque oscillator circuit comprising:
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a first magnetic tunnel junction generating an oscillating signal under a direct current (DC) bias, the first magnetic tunnel junction comprising; a first magnetic reference layer having a fixed magnetization; a magnetic precession layer having a magnetization capable of precessing about an initial direction under the DC bias; and a first barrier layer interposed between the first magnetic reference layer and the magnetic precession layer, the first barrier layer being formed of an insulating material capable of inducing a negative differential resistance under the DC bias; and at least one amplifying circuit receiving and amplifying the oscillating signal generated by the first magnetic tunnel junction, each respective at least one amplifying circuit comprising a resistor and a second magnetic tunnel junction connected in series between a supply voltage and a ground potential, the second magnetic tunnel junction having a negative differential resistance under biasing of the supply voltage, the oscillating signal being applied to a supply voltage side of the respective at least one amplifying circuit, the respective at least one amplifying circuit providing the amplified oscillating signal at a node between the resistor and the second magnetic tunnel junction; wherein the first barrier layer is formed of a material AB having a cubic crystal structure where A represents cation sites and B represents anion sites in the cubic crystal structure, the cation sites A are occupied disorderly by at least two of Mg, Al, Zn and vacancy, and the anion sites B are occupied by one or more of O, N, Cl, F and vacancy, and the first barrier layer has a thickness in a range of 4-7 atomic layers. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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Specification