Method for treating a semiconductor device

• US 10,137,480 B2
• Filed: 12/21/2016
• Issued: 11/27/2018
• Est. Priority Date: 03/26/2015
• Status: Active Grant

• Current Assignee: Life Technologies Corporation (Thermo Fisher Scientific Incorporated)
• Original Assignee: Life Technologies Corporation (Thermo Fisher Scientific Incorporated)
• Inventors: Ball, James A., Waggoner, Phil, Parker, Scott
• Primary Examiner(s): CARRILLO, BIBI SHARIDAN
• Application Number:
  US15/387,591
• Publication Number:
  US 20170095841A1
• Time in Patent Office: 706 Days
• CPC Class Codes: B05D 3/00 Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials successively applying liquids or other fluent materials B05D1/36; drying ovens F26B
• CPC Class Codes: B05D 5/12 to obtain a coating with specific electrical properties
• CPC Class Codes: B08B 3/08 the liquid having chemical or dissolving effect substances used, see the relevant classes
• CPC Class Codes: B08B 9/08 Cleaning containers, e.g. tanks
• CPC Class Codes: C11D 1/22 derived from aromatic compounds
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 3/162 containing Si
• CPC Class Codes: C11D 3/3418 Toluene -, xylene -, cumene -, benzene - or naphthalene sulfonates or sulfates
• CPC Class Codes: C11D 3/43 Solvents
• CPC Class Codes: C11D 7/34 containing sulfur
• CPC Class Codes: C11D 7/5013 containing nitrogen
• CPC Class Codes: C11D 7/5022 containing oxygen
• CPC Class Codes: G01N 27/414 Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
• CPC Class Codes: G01N 27/4148 Integrated circuits therefor, e.g. fabricated by CMOS processing CMOS processing per se H01L21/82
• CPC Class Codes: H01L 21/02057 Cleaning during device manufacture

Abstract

A method of treating a sensor array including a plurality of sensors and an isolation structure, where a sensor of the plurality of sensors has a sensor pad exposed at a surface of the sensor array and the isolation structure is disposed between the sensor pad and sensor pads of other sensors of the plurality of sensors, comprises exposing the sensor pad and the isolation structure to a non-aqueous organo-silicon solution including an organo-silicon compound and a first non-aqueous carrier; applying an acid solution including an organic acid and a second non-aqueous carrier to the sensor pad; and rinsing the acid solution from the sensor pad and the isolation structure.

Claims

1. A method of treating a sensor array, the sensor array including a plurality of sensors and an isolation structure, a sensor of the plurality of sensors having a sensor pad exposed at a surface of the sensor array, wherein the exposed surface of the sensor pad defines a bottom surface of the isolation structure, the method comprising:

exposing the exposed surface of the sensor pad to a non-aqueous organo-silicon solution including an organo-silicon compound and a first non-aqueous carrier;

applying an acid solution including an organic acid and a second non-aqueous carrier to the exposed surface of the sensor pad; and

rinsing the acid solution from the exposed surface of the sensor pad.

2. The method of claim 1, wherein a portion of the organo-silicon compound remains on the isolation structure.

3. The method of claim 1, wherein the organo-silicon compound includes a silane functionalized with an aryl, polyaryl, alkyl, alkoxy, halo, or cyano moiety, or any combination thereof.

4. The method of claim 1, wherein the organo-silicon compound includes a polysiloxane including aryl, dialkyl or alkylhydro units, or combinations thereof.

5. The method of claim 1, wherein the organo-silicon compound includes a polysiloxane including hydrophilic, polar, or amphiphilic units, or combinations thereof.

6. The method of claim 1, wherein the organo-silicon compound includes a silazane.

7. The method of claim 1, wherein the organo-silicon compound has a molecular weight in a range of 50 Da to 10000 Da.

8. The method of claim 1, wherein the non-aqueous organo-silicon solution includes the organo-silicon compound in an amount of 0.001% to 10.0% by weight.

9. The method of claim 1, wherein the organic acid includes sulfonic acid.

10. The method of claim 1, wherein the first non-aqueous carrier is an alkane having between 6 and 24 carbons.

11. The method of claim 1, further comprising heating the sensor pad and the non-aqueous organo-silicon solution while exposing the sensor pad to the non-aqueous organo-silicon solution.

12. The method of claim 1, further comprising exposing at least the sensor pad to a basic solution.

13. The method of claim 3, wherein the silane is selected from the group consisting of phenyldimethylchlorosilane, tert-butylchlorodiiphenylsilane, chlorotripropylsilane, (N,N-dimethylamino) trimethyl-silane, tris(trimethylsilyl)silane, triethylchlorosilane, 3-cyanopropyldimethylchloro-silane, chlorotriethylsilane, 1,2-bis(chlorodimethylsiyl)ethane, trimethylsilyltrifluoronesulfonate, trioctylsilane, dodecyldimethylchlorosilane, chlorodimethylthexylsilane, trimethylchlorosilane, chloro(chloromethyl) dimethylsilane, thexyldimethylchlorosilane, triisopropylchlorosilane, trimethylmethoxysilane, trimethylchlorosilane, chlorotriisopropylsilane, acetoxytrimethylsilane, and a combination thereof.

14. The method of claim 4, wherein the aryl unit includes a phenylalkyl siloxyl unit.

15. The method of claim 4, wherein the dialkyl unit or the alkylhydro unit includes an alkyl moiety selected from methyl, ethyl, propyl, butyl moieties, and a combination thereof.

16. The method of claim 9, wherein the sulfonic acid includes dodecyl benzene sulfonic acid.

17. The method of claim 12, wherein the basic solution includes between 0.005M and 1.5M sodium hydroxide.

18. The method of claim 15, wherein the polysiloxane includes a siloxane selected from the group consisting of an alkyl terminated polydimethylsiloxane, a hydride-terminated polydimethylsiloxane, a monovinyl terminated polydimethylsiloxane, dichloro-tetramethyldisiloxane, hexamethyltrisiloxane, polymethylhydrosiloxane, tris(trimethylsilyloxy)silane, octamethyltrisiloxane, and a combination thereof.