Methods of spin-on deposition of metal oxides

• US 10,141,183 B2
• Filed: 01/26/2017
• Issued: 11/27/2018
• Est. Priority Date: 01/28/2016
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Mohanty, Nihar, Huli, Lior, Smith, Jeffrey, Farrell, Richard
• Primary Examiner(s): Roman, Angel
• Application Number:
  US15/416,645
• Publication Number:
  US 20170221704A1
• Time in Patent Office: 670 Days
• Field of Search: None
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: H01L 21/02175 characterised by the metal H01L21/02197 takes precedence
• CPC Class Codes: H01L 21/02186 the material containing titanium, e.g. TiO2
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02307 treatment by exposure to a liquid
• CPC Class Codes: H01L 21/02315 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/02334 in-situ cleaning after layer formation, e.g. removing process residues
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/02359 treatment to change the surface groups of the insulating layer
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials

Abstract

Techniques herein provide methods for depositing spin-on metal materials for creating metal hard mask (MHM) structures without voids in the deposition. This includes effective spin-on deposition of TiOx, ZrOx, SnOx, HFOx, TaOx, et cetera. Such materials can help to provide differentiation of material etch resistivity for differentiation. By enabling spin-on metal hard mask (MHM) for use with a multi-line layer, a slit-based or self-aligned blocking strategy can be effectively used. Techniques herein include identifying a fill material to fill particular openings in a given relief pattern, modifying a surface energy value of surfaces within the opening such that a contact angle value of an interface between the fill material in liquid form and the sidewall or floor surfaces enables gap-free or void-free filling.

Claims

1. A method for depositing material on a substrate, the method comprising:

receiving a substrate having a relief pattern that defines openings that uncover an underlying layer, the relief pattern providing sidewall surfaces that define the openings, the underlying layer providing floor surfaces that define the openings, the sidewall surfaces having a first surface energy value, the floor surfaces having a second surface energy value;

identifying a fill material comprising a metal hard mask material to fill the defined openings by being deposited on the substrate via spin-on deposition;

executing a surface energy modification treatment, the surface energy modification treatment modifying at least one of the first surface energy value and the second surface energy value such that a contact angle value of an interface between the fill material in liquid form and the sidewall surfaces or the floor surfaces is less than 60 degrees; and

depositing the fill material on the substrate via spin-on deposition after executing the surface energy modification treatment such that the fill material fills the defined openings being in contact with the sidewall surfaces and the floor surfaces.

2. The method of claim 1, wherein executing the surface energy modification treatment includes modifying the first surface energy value such that the contact angle value of the interface between the fill material in liquid form and the sidewall surfaces is less than 60 degrees.

3. The method of claim 1, wherein executing the surface energy modification treatment results in the contact angle value of the interface between the fill material in liquid form and the sidewall surfaces is less than 30 degrees.

4. The method of claim 3, wherein executing the surface energy modification treatment results in the contact angle value of the interface between the fill material in liquid form and the sidewall surfaces is less than 20 degrees.

5. The method of claim 1, wherein executing the surface energy modification treatment includes modifying the second surface energy value such that the contact angle value of the interface between the fill material in liquid form and the floor surfaces is less than 60 degrees.

6. The method of claim 1, wherein executing the surface energy modification treatment results in the contact angle value of the interface between the fill material in liquid form and the floor surfaces is less than 30 degrees.

7. The method of claim 6, wherein executing the surface energy modification treatment results in the contact angle value of the interface between the fill material in liquid form and the floor surfaces is less than 20 degrees.

8. The method of claim 1, wherein executing the surface energy modification treatment includes exposing the substrate to plasma products within a plasma processing system.

9. The method of claim 1, wherein executing the surface energy modification treatment includes depositing a liquid-based modifier on the relief pattern.

10. The method of claim 9, wherein depositing the liquid-based modifier on the relief pattern includes executing a post-etch wet clean.

11. The method of claim 1, wherein executing the surface energy modification treatment includes depositing a conformal film on the relief pattern.

12. The method of claim 11, wherein executing the surface energy modification treatment includes executing a treatment selected from the group consisting of atomic layer deposition, chemical vapor deposition, and direct current superposition.

16. The method of claim 1, wherein the metal hardmask material comprises a metal oxide.

13. A method for depositing material on a substrate, the method comprising:

receiving a substrate having a relief pattern that defines openings that uncover an underlying layer, the relief pattern providing sidewall surfaces that define the openings, the underlying layer providing floor surfaces that define the openings, the sidewall surfaces having a first surface energy value, the floor surfaces having a second surface energy value;

identifying a fill material comprising to fill the defined openings by being deposited on the substrate via spin-on deposition;

executing a surface energy modification treatment, the surface energy modification treatment modifying at least one of the first surface energy value and the second surface energy value such that a contact angle value of an interface between the fill material in liquid form and the sidewall surfaces or the floor surfaces is less than 60 degrees; and

depositing the fill material on the substrate via spin-on deposition after executing the surface energy modification treatment such that the fill material fills the defined openings being in contact with the sidewall surfaces and the floor surfaces, wherein the relief pattern defines the openings having critical dimensions less than 40 nanometers.

14. A method for depositing material on a substrate, the method comprising:

receiving a substrate having a relief pattern that defines openings that uncover an underlying layer, the relief pattern providing sidewall surfaces that define the openings, the underlying layer providing floor surfaces that define the openings, the sidewall surfaces having a first surface energy value, the floor surfaces having a second surface energy value;

identifying a fill material comprising to fill the defined openings by being deposited on the substrate via spin-on deposition;

executing a surface energy modification treatment, the surface energy modification treatment modifying at least one of the first surface energy value and the second surface energy value such that a contact angle value of an interface between the fill material in liquid form and the sidewall surfaces or the floor surfaces is less than 60 degrees; and

depositing the fill material on the substrate via spin-on deposition after executing the surface energy modification treatment such that the fill material fills the defined openings being in contact with the sidewall surfaces and the floor surfaces, wherein depositing the fill material on the substrate includes using a deposition solvent system that matches the first surface energy value.

15. The method of claim 14, wherein depositing the fill material on the substrate includes using the deposition solvent system that matches the second surface energy value.