Systems, methods, and apparatus for improved finFETs

• US 10,141,306 B2
• Filed: 01/27/2017
• Issued: 11/27/2018
• Est. Priority Date: 01/27/2017
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Qualcomm, Inc.
• Inventors: Liu, Yanxiang, Yang, Haining
• Primary Examiner(s): Shook, Daniel P
• Application Number:
  US15/418,651
• Publication Number:
  US 20180219009A1
• Time in Patent Office: 669 Days
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/31155 by ion implantation
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264
• CPC Class Codes: H01L 21/823418 with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
• CPC Class Codes: H01L 21/823431 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 21/823437 with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
• CPC Class Codes: H01L 21/823481 isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
• CPC Class Codes: H01L 27/0886 including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/0649 Dielectric regions, e.g. SiO2 regions, air gaps
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

To avoid the problems associated with low density spin on dielectrics, some examples of the disclosure include a finFET with an oxide material having different densities. For example, one such finFET may include an oxide material located in a gap between adjacent fins, the oxide material directly contacts the adjacent fins of the plurality of fins with a first density proximate to a top layer of the oxide material and a second density proximate to a bottom layer of the oxide material and wherein the first density is greater than the second density.

Claims

1. A finFET comprising:

a plurality of fins separated from each other to form a plurality of gaps between adjacent fins of the plurality of fins;

an oxide material located in the plurality of gaps, the oxide material directly contacts the adjacent fins of the plurality of fins with a first density proximate to a top layer of the oxide material and a second density proximate to a bottom layer of the oxide material; and

wherein the first density is greater than the second density.

2. The finFET of claim 1, wherein the oxide material has a first ion concentration near the top layer of the oxide material that is greater than a second ion concentration near the bottom layer of the oxide material.

3. The finFET of claim 2, wherein ions of the first ion concentration are one of a silicon ions, carbon ions, nitrogen ions, fluorine ions, or helium ions.

4. The finFET of claim 1, further comprising a plurality of gate structures, one of the plurality of gate structures surrounding each of the plurality of fins, and wherein a portion of the oxide material is located under each of the plurality of gate structures.

5. The finFET of claim 4, further comprising:

a source proximate to the plurality of gate structures; and

a drain proximate to the plurality of gate structures opposite the source.

6. The finFET of claim 1, wherein the finFET is incorporated into a device selected from a group consisting of a music player, a video player, an entertainment unit, a navigation device, a communications device, a mobile device, a mobile phone, a smartphone, a personal digital assistant, a fixed location terminal, a tablet computer, a computer, a wearable device, a laptop computer, a server, and a device in an automotive vehicle, and further including the device.

7. A finFET comprising:

a silicon substrate;

a plurality of fins on a surface of the silicon substrate;

an oxide material on the surface of the silicon substrate, the oxide material located between each of the plurality of fins and directly contacts the plurality of fins, wherein the oxide material has a first density that directly contacts the plurality of fins and a second density that directly contacts the plurality of fins, the second density is lesser than the first density; and

a plurality of gate structures, each of the plurality of gate structures located on the oxide material and surrounds a respective one of the plurality of fins.

8. The finFET of claim 7, wherein the oxide material has a first ion concentration proximate to the plurality of gate structures that is greater than a second ion concentration proximate to the silicon substrate.

9. The finFET of claim 8, wherein ions of the first ion concentration are one of a silicon ions, carbon ions, nitrogen ions, fluorine ions, or helium ions.

10. The finFET of claim 9, further comprising:

a source proximate to the plurality of gate structures; and

a drain proximate to the plurality of gate structures opposite the source.

11. The finFET of claim 10, wherein the finFET is incorporated into a device selected from a group consisting of a music player, a video player, an entertainment unit, a navigation device, a communications device, a mobile device, a mobile phone, a smartphone, a personal digital assistant, a fixed location terminal, a tablet computer, a computer, a wearable device, a laptop computer, a server, and a device in an automotive vehicle, and further including the device.

12. A finFET comprising:

first means for conducting current;

second means for conducting current separated from the first means for conducting current to form a gap between the first means for conducting current and the second means for conducting current;

means for isolation located in the gap and on each side of both the first means for conducting current and the second means for conducting current, the means for isolation directly contacts the first means for conducting current and the second means for conducting current with a first density proximate to a top layer of the means for isolation and a second density proximate to a bottom layer of the means for isolation; and

wherein the first density is greater than the second density.

13. The finFET of claim 12, wherein the means for isolation has a first ion concentration near the top layer of the means for isolation that is greater than a second ion concentration near the bottom layer of the means for isolation.

14. The finFET of claim 13, wherein ions of the first ion concentration are one of a silicon ions, carbon ions, nitrogen ions, fluorine ions, or helium ions.

15. The finFET of claim 12, further comprising a plurality of gate structures, one of the plurality of gate structures surrounding each of the first means for conducting current and the second means for conducting current, and wherein a portion of the means for isolation is located under each of the plurality of gate structures.

16. The finFET of claim 15, further comprising:

a source proximate to the plurality of gate structures; and

a drain proximate to the plurality of gate structures opposite the source.

17. The finFET of claim 12, wherein the finFET is incorporated into a device selected from a group consisting of a music player, a video player, an entertainment unit, a navigation device, a communications device, a mobile device, a mobile phone, a smartphone, a personal digital assistant, a fixed location terminal, a tablet computer, a computer, a wearable device, a laptop computer, a server, and a device in an automotive vehicle, and further including the device.