Systems, methods, and apparatus for improved finFETs
First Claim
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1. A finFET comprising:
- a plurality of fins separated from each other to form a plurality of gaps between adjacent fins of the plurality of fins;
an oxide material located in the plurality of gaps, the oxide material directly contacts the adjacent fins of the plurality of fins with a first density proximate to a top layer of the oxide material and a second density proximate to a bottom layer of the oxide material; and
wherein the first density is greater than the second density.
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Abstract
To avoid the problems associated with low density spin on dielectrics, some examples of the disclosure include a finFET with an oxide material having different densities. For example, one such finFET may include an oxide material located in a gap between adjacent fins, the oxide material directly contacts the adjacent fins of the plurality of fins with a first density proximate to a top layer of the oxide material and a second density proximate to a bottom layer of the oxide material and wherein the first density is greater than the second density.
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Citations
17 Claims
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1. A finFET comprising:
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a plurality of fins separated from each other to form a plurality of gaps between adjacent fins of the plurality of fins; an oxide material located in the plurality of gaps, the oxide material directly contacts the adjacent fins of the plurality of fins with a first density proximate to a top layer of the oxide material and a second density proximate to a bottom layer of the oxide material; and wherein the first density is greater than the second density. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A finFET comprising:
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a silicon substrate; a plurality of fins on a surface of the silicon substrate; an oxide material on the surface of the silicon substrate, the oxide material located between each of the plurality of fins and directly contacts the plurality of fins, wherein the oxide material has a first density that directly contacts the plurality of fins and a second density that directly contacts the plurality of fins, the second density is lesser than the first density; and a plurality of gate structures, each of the plurality of gate structures located on the oxide material and surrounds a respective one of the plurality of fins. - View Dependent Claims (8, 9, 10, 11)
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12. A finFET comprising:
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first means for conducting current; second means for conducting current separated from the first means for conducting current to form a gap between the first means for conducting current and the second means for conducting current; means for isolation located in the gap and on each side of both the first means for conducting current and the second means for conducting current, the means for isolation directly contacts the first means for conducting current and the second means for conducting current with a first density proximate to a top layer of the means for isolation and a second density proximate to a bottom layer of the means for isolation; and wherein the first density is greater than the second density. - View Dependent Claims (13, 14, 15, 16, 17)
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Specification