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Oxide semiconductor, thin film transistor, and display device

  • US 10,141,343 B2
  • Filed: 04/06/2017
  • Issued: 11/27/2018
  • Est. Priority Date: 10/24/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first conductive layer;

    a second conductive layer;

    a first insulating layer over the first conductive layer and the second conductive layer;

    an oxide semiconductor layer over the first insulating layer;

    a third conductive layer electrically connected to the oxide semiconductor layer;

    a fourth conductive layer electrically connected to the oxide semiconductor layer; and

    a fifth conductive layer over the first insulating layer,wherein the first conductive layer includes a region functioning as a gate electrode of a transistor,wherein the second conductive layer includes a region functioning as a first electrode of a capacitor,wherein the oxide semiconductor layer includes a region functioning as a channel formation region of the transistor,wherein the third conductive layer includes a region functioning as one of a source electrode and a drain electrode of the transistor,wherein the fourth conductive layer includes a region functioning as the other one of the source electrode and the drain electrode of the transistor,wherein the fourth conductive layer is electrically connected to the second conductive layer,wherein the fifth conductive layer includes a region functioning as a second electrode of the capacitor,wherein the oxide semiconductor layer includes In, Ga, and Zn, andwherein a concentration of Zn is lower than a concentration of In or a concentration of Ga.

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