Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices
First Claim
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1. A light-emitting device, comprising:
- an electron blocking layer, wherein at least a portion of the electron blocking layer is arranged to have a tensile strain;
a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain; and
an active layer disposed between the hole blocking layer and the electron blocking layer.
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Abstract
A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.
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Citations
20 Claims
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1. A light-emitting device, comprising:
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an electron blocking layer, wherein at least a portion of the electron blocking layer is arranged to have a tensile strain; a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain; and an active layer disposed between the hole blocking layer and the electron blocking layer. - View Dependent Claims (2, 3, 4, 5, 6, 8, 9, 10)
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7. A light-emitting device, comprising:
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an electron blocking layer; a hole blocking layer, wherein at least a portion of the hold blocking layer is arranged to have a compressive strain; and an active layer disposed between the hole blocking layer and the electron blocking layer, the active layer including a first barrier layer arranged to have a tensile strain, a second barrier layer arranged to have a tensile strain, and a well layer disposed between the first barrier layer and the second barrier layer.
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11. A light-emitting device, comprising:
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an electron blocking layer, wherein at least a portion of the electron blocking layer is arranged to have a tensile strain; a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain; and an active layer formed between the hole blocking layer and the electron blocking layer, the active layer including at least one well structure, the well structure including a first barrier layer that is arranged to have a tensile strain, a second barrier layer that is arranged to have a tensile strain, and a well layer disposed between the first barrier layer and the second barrier layer, wherein the electron blocking layer is part of one of an upper confinement layer of the light emitting device and a lower confinement layer of the light-emitting device, and wherein the hole blocking layer is part of the other one of the upper confinement layer of the light emitting device and the lower confinement layer of the light-emitting device. - View Dependent Claims (12, 13, 14, 15)
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16. A light-emitting device, comprising:
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an electron blocking layer at least a portion of which is arranged to have a tensile strain; a hole blocking layer including a first unstrained n-type layer and a second n-type layer that is arranged to have a compressive strain; and an active layer formed between the hole blocking layer and the electron blocking layer, wherein the first n-type layer is formed of a first material from a system of AlGaInP, the second n-type layer is formed of a second material from the system of AlGaInP that has a greater indium-ratio than the first material. - View Dependent Claims (17, 18, 20)
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19. A light-emitting device, comprising:
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an electron blocking layer; a hole blocking layer, the hole blocking layer including a first unstrained n-type layer and a second n-type layer that is arranged to have a compressive strain; and an active layer formed between the hole blocking layer and the electron blocking layer, the active layer including at least one well structure, the well structure including a first barrier layer that is arranged to have a tensile strain, a second barrier layer that is arranged to have a tensile strain, and a well layer disposed between the first barrier layer and the second barrier layer, and the first barrier layer and the second barrier layer having a composition represented as (AlxGa(1-x))1-yInyP, where 0.4<
x<
1 and 0<
y<
0.49,wherein the first n-type layer is formed of a first material from a system of AlGaInP, the second n-type layer is formed of a second material from the system of AlGaInP that has a greater indium-ratio than the first material.
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Specification