Light emitting diode chip having distributed Bragg reflector and method of fabricating the same
First Claim
1. A method of fabricating a light emitting diode chip, the method comprising:
- forming a light emitting structure on a first surface of a substrate, the light emitting structure comprising;
a first conductive-type semiconductor layer;
a second conductive-type semiconductor layer; and
an active layer disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer;
removing a portion of the substrate by grinding a second surface of the substrate;
after the grinding, reducing the surface roughness of the second surface of the substrate by lapping the substrate; and
forming a distributed Bragg reflector on the second surface of the substrate,wherein the distributed Bragg reflector comprises a first material layer comprising TiO2, a second material layer comprising SiO2, a third material layer comprising TiO2, and a fourth material layer comprising SiO2, andwherein the first material layer has an optical thickness that is different from an optical thickness of the third material layer.
1 Assignment
0 Petitions
Accused Products
Abstract
Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.
-
Citations
8 Claims
-
1. A method of fabricating a light emitting diode chip, the method comprising:
-
forming a light emitting structure on a first surface of a substrate, the light emitting structure comprising; a first conductive-type semiconductor layer; a second conductive-type semiconductor layer; and an active layer disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; removing a portion of the substrate by grinding a second surface of the substrate; after the grinding, reducing the surface roughness of the second surface of the substrate by lapping the substrate; and forming a distributed Bragg reflector on the second surface of the substrate, wherein the distributed Bragg reflector comprises a first material layer comprising TiO2, a second material layer comprising SiO2, a third material layer comprising TiO2, and a fourth material layer comprising SiO2, and wherein the first material layer has an optical thickness that is different from an optical thickness of the third material layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
Specification