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Light emitting diode chip having distributed Bragg reflector and method of fabricating the same

  • US 10,141,480 B2
  • Filed: 11/27/2013
  • Issued: 11/27/2018
  • Est. Priority Date: 11/13/2009
  • Status: Active Grant
First Claim
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1. A method of fabricating a light emitting diode chip, the method comprising:

  • forming a light emitting structure on a first surface of a substrate, the light emitting structure comprising;

    a first conductive-type semiconductor layer;

    a second conductive-type semiconductor layer; and

    an active layer disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer;

    removing a portion of the substrate by grinding a second surface of the substrate;

    after the grinding, reducing the surface roughness of the second surface of the substrate by lapping the substrate; and

    forming a distributed Bragg reflector on the second surface of the substrate,wherein the distributed Bragg reflector comprises a first material layer comprising TiO2, a second material layer comprising SiO2, a third material layer comprising TiO2, and a fourth material layer comprising SiO2, andwherein the first material layer has an optical thickness that is different from an optical thickness of the third material layer.

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