Transient electronic devices comprising inorganic or hybrid inorganic and organic substrates and encapsulates

• US 10,143,086 B2
• Filed: 11/14/2016
• Issued: 11/27/2018
• Est. Priority Date: 04/12/2013
• Status: Active Grant

• Current Assignee: Board of Trustees of The University of Illinois
• Original Assignee: Board of Trustees of The University of Illinois
• Inventors: Rogers, John A., Kang, Seung-Kyun, Hwang, SukWon, Cheng, Jianjun, Zhang, Yanfeng, Ying, Hanze
• Primary Examiner(s): Mandala, Victor A
• Application Number:
  US15/351,234
• Publication Number:
  US 20170164482A1
• Time in Patent Office: 743 Days
• CPC Class Codes: A61B 2562/125 characterised by the manufacture of electrodes
• CPC Class Codes: A61B 5/686 Permanently implanted devices, e.g. pacemakers, other stimulators, biochips A61B5/6861 takes precedence
• CPC Class Codes: A61M 5/44 having means for cooling or heating the devices or media
• CPC Class Codes: G06K 19/0775 arrangements for connecting the integrated circuit to the antenna
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/31133 by chemical means
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 23/291 Oxides or nitrides or carbides, e.g. ceramics, glass
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/3192 Multilayer coating
• CPC Class Codes: H01L 23/49894 Materials of the insulating layers or coatings
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 1/0275 Security details, e.g. tampering prevention or detection
• CPC Class Codes: H05K 1/0286 Programmable, customizable or modifiable circuits by programmable non-printed jumper connections H05K3/222
• CPC Class Codes: H05K 1/0306 : Inorganic insulating substrates, e.g. ceramic, glass
• CPC Class Codes: H05K 1/185 : Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit semiconductor chips encapsulated by interconnect and support structures H01L23/5389, H01L24/00
• CPC Class Codes: H05K 13/00 : Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
• CPC Class Codes: H05K 2201/10151 : Sensor
• CPC Class Codes: H05K 2201/10196 : Variable component, e.g. variable resistor
• CPC Class Codes: H05K 2201/10212 : Programmable component
• CPC Class Codes: H05K 2203/0271 : Mechanical force other than pressure, e.g. shearing or pulling
• CPC Class Codes: H05K 2203/0292 : Using vibration, e.g. during soldering or screen printing
• CPC Class Codes: H05K 2203/0769 : Dissolving insulating materials, e.g. coatings, not used for developing resist after exposure
• CPC Class Codes: H05K 2203/0776 : Uses of liquids not otherwise provided for in H05K2203/0759 - H05K2203/0773
• CPC Class Codes: H05K 2203/0786 : Using an aqueous solution, e.g. for cleaning or during drilling of holes
• CPC Class Codes: H05K 2203/17 : Post-manufacturing processes
• CPC Class Codes: H05K 2203/175 : Configurations of connections suitable for easy deletion, e.g. modifiable circuits or temporary conductors for electroplating; Processes for deleting connections
• CPC Class Codes: H05K 2203/178 : Demolishing, e.g. recycling, reverse engineering, destroying for security purposes; Using biodegradable materials
• CPC Class Codes: H05K 3/22 : Secondary treatment of printed circuits H05K3/1283 takes precedence; embedding circuits in grooves by pressure H05K3/107
• CPC Class Codes: H05K 3/285 : Permanent coating compositions
• CPC Class Codes: H05K 3/287 : Photosensitive compositions
• CPC Class Codes: H05K 3/288 : Removal of non-metallic coatings, e.g. for repairing
• CPC Class Codes: H05K 5/069 : Other details of the casing, e.g. wall structure, passage for a connector, a cable, a shaft
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10T 137/0318 : Processes
• CPC Class Codes: Y10T 29/49124 : On flat or curved insulated base, e.g., printed circuit, etc.
• CPC Class Codes: Y10T 428/239 : Complete cover or casing

Abstract

The invention provides transient devices, including active and passive devices that physically, chemically and/or electrically transform upon application of at least one internal and/or external stimulus. Incorporation of degradable device components, degradable substrates and/or degradable encapsulating materials each having a programmable, controllable and/or selectable degradation rate provides a means of transforming the device. In some embodiments, for example, transient devices of the invention combine degradable high performance single crystalline inorganic materials with selectively removable substrates and/or encapsulants.

Claims

1. A method of using a transient electronic device, said method comprising the steps of:

providing the transient electronic device comprising;

a substrate;

one or more active or passive electronic device components supported by said substrate;

wherein said active or passive electronic device components independently comprise a selectively transformable material; and

an encapsulant layer at least partially encapsulating said one or more active or passive electronic device components;

wherein said substrate, said encapsulant layer or both independently comprise a selectively removable inorganic material responsive to an external or internal stimulus;

wherein at least partial removal of said substrate, said encapsulant layer or both in response to said external or internal stimulus initiates at least partial transformation of said one or more active or passive electronic device components providing a programmable transformation of the transient electronic device in response to said external or internal stimulus at a pre-selected time or at a pre-selected rate, wherein said programmable transformation provides a change in function of the transient electronic device from a first condition to a second condition; and

exposing said transient electronic device to said external or internal stimulus resulting in said at least partial removal of said substrate or encapsulant layer to expose said one or more active or passive electronic device components to said external or internal stimulus, thereby providing said programmable transformation of the transient electronic device;

wherein said removal of said substrate, said encapsulant layer or both in response to said internal or external stimulus occurs via a phase change, dissolution, hydrolysis, bioresorption, etching, corrosion, a photochemical reaction, an electrochemical reaction or any combination of these processes.

2. The method of claim 1, wherein said one or more active or passive electronic device components comprise one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components.

3. The method of claim 1, wherein said step of exposing said transient electronic device to said external or internal stimulus results in the entire removal of said substrate, said encapsulant layer or both.

4. The method of claim 1, wherein said step of exposing said transient electronic device to said external or internal stimulus results in less than the entire removal of said substrate, said encapsulant layer or both.

5. The method of claim 1, wherein said step of exposing said transient electronic device to said external or internal stimulus exposes at least 1% of an outer surface of said one or more active or passive electronic device components.

6. The method of claim 1, wherein said step of exposing said transient electronic device to said external or internal stimulus exposes 1% to 100% of an outer surface of said one or more active or passive electronic device components.

7. The method of claim 1, wherein said substrate, said encapsulant layer or both independently comprise an entirely inorganic structure or a composite inorganic and organic structure.

8. The method of claim 7, wherein said entirely inorganic structure comprises one or more of SiO₂, spin-on-glass, Mg, Mg alloys, Fe, W, Zn, Mo, Si, SiGe, Si₃N₄ and MgO.

9. The method of claim 7, wherein said composite inorganic and organic structure comprises an inorganic layer having a first surface adjacent said active or passive electronic device components and a second surface adjacent to an organic layer or an organic layer having a first surface adjacent said active or passive electronic device components and a second surface adjacent said inorganic layer.

10. The method of claim 9, wherein said inorganic layer comprises one or more of SiO₂, spin-on-glass, Mg, Mg alloys, Fe, W, Zn, Mo, Si, SiGe, Si₃N₄ and MgO and said organic layer comprises one or more of a polyanhydride and poly(dimethyl siloxane) (PDMS).

11. The method of claim 1, wherein said device is an entirely inorganic device, wherein said active or passive electronic device components, said substrate and said encapsulant layer each are independently entirely composed of one or more inorganic materials.

12. The method of claim 1, wherein said substrate, said encapsulant layer or both independently have a preselected transience profile in response to said external or internal stimulus, wherein said preselected transience profile is characterized by a removal of 0.01% to 100% of said substrate or said encapsulant layer over a time interval selected from the range of 1 ms to 5 years or a decrease in average thickness of said substrate or said encapsulant layer at a rate selected over the range of 0.01 nm/day to 100 microns s⁻

1.

13. The method of claim 1, wherein said selectively removable inorganic material of said substrate, said encapsulant layer or both independently comprises a metal, a metal oxide, a ceramic or a combination of these, a crystalline material, an amorphous material or a combination thereof, a single crystalline material, polycrystalline material or doped crystalline material, a glass, a thin film, a coating, a foil or any combination of these, or a nanostructured layer or a microstructured layer.

14. The method of claim 1, wherein said selectively removable inorganic material of said substrate, said encapsulant layer or both independently comprises Mg, W, Mo, Fe, Zn, or an alloy thereof, SiO₂, MgO, N₄Si₃, SiC, a spin-on-glass, a solution processable glass, a biocompatible material, a bioinert material or a combination of biocompatible and bioinert materials.

15. The method of claim 1, wherein said substrate, said encapsulant layer or both independently comprise a multilayer structure comprising one or more thin films, coatings, or foils comprising said selectively removable inorganic material.

16. The method of claim 1, wherein said substrate, said encapsulant layer or both independently comprises a composite inorganic and organic structure having a multilayer geometry.

17. The method of claim 15, wherein said multilayer structure further comprises one or more electrically insulating layers, barrier layers or any combinations thereof;

wherein said one or more electrically insulating layers or barrier layers is provided in physical contact, electrical contact or both with said one or more thin films, coatings, or foils;

wherein said one or more electrically insulating layers or barrier layers comprises an exterior layer of said multilayer structure or wherein said one or more electrically insulating layers or barrier layers comprises an interior layer of said multilayer structure in physical contact or electrical contact with said one or more active or passive electronic device components;

or wherein said one or more electrically insulating layers or barrier layers comprises a polymer, an insulating ceramic, a glass, SiO₂, spin-on glass, MgO or any combination of these.

18. The method of claim 17, wherein said multilayer structure comprises a metal foil or thin metal film having a first side in physical contact with a first electronically insulating layer or barrier layer;

wherein said first electronically insulating layer or barrier layer is an exterior layer of said multilayer structure or wherein said first electronically insulating layer or barrier layer is an interior layer of said multilayer structure in physical contact or electrical contact with said active or passive electronic device components;

wherein said first electronically insulating layer or barrier layer comprises a polymer layer or coating, a metal oxide layer or coating, a glass layer or coating or any combination of these;

wherein said multilayer structure comprises said metal foil or thin metal film having a second side coated in contact with a second electronically insulating layer or barrier layer;

or wherein said metal foil or thin metal film is provided between said first electronically insulating layer or barrier layer and said second electronically insulating layer or barrier layer.

19. The method of claim 1, wherein said substrate, said encapsulant layer or both independently have a porosity selected from the range of 0.01% to 99.9%, an extent of crystallinity selected from the range of 0.01% to 100%, or a density selected from the range of 0.01% to 100% compared to bulk prior to said at least partial removal of said substrate, said encapsulant layer or both in response to said external or internal stimulus.

20. The method of claim 1, wherein a time for a thickness of said selectively removable inorganic material to reach zero is provided by the expression:

21. The method of claim 1, wherein said substrate, said encapsulant layer or both are substantially impermeable to water, limit a net leakage current to the surroundings to 0.1 μ

A/cm² or less, or undergo an increase in volume equal to or less than 10% upon exposure to an aqueous or nonaqueous solvent prior to said at least partial removal of said substrate, said encapsulant layer or both in response to said external or internal stimulus.

22. The method of claim 15, wherein said thin film, coating, or foil has an average thickness over or underneath of said one or more active or passive electronic device components less than or equal to 1000 μ

m prior to said at least partial removal of said substrate, said encapsulant layer or both in response to said external or internal stimulus.

23. The method of claim 1, wherein said substrate, said encapsulant layer or both independently have a thickness selected from the range of 0.1 μ

m to 1000 μ

m, an average modulus selected over the range of 0.5 KPa to 10 TPa, a net flexural rigidity less than or equal to 1×

10<sup>−

4</sup> Nm, or a net bending stiffness less than or equal to 1×

10⁸ GPa μ

m⁴ prior to said at least partial removal of said substrate, said encapsulant layer or both in response to said external or internal stimulus.

24. The method of claim 1, wherein said substrate, said encapsulant layer or both are at least partially optically transparent in the visible or infrared regions of the electromagnetic spectrum.

25. The method of claim 1, wherein said substrate, said encapsulant layer or both are generated via physical vapor deposition, chemical vapor deposition, sputtering, atomic layer deposition, electrochemical deposition, spin casting, electrohydrodynamic jet printing, screen printing or any combination of these.

26. The method of claim 1, wherein said substrate, said encapsulant layer or both cover or support a percentage of an exterior area or an interior area of said one or more active or passive electronic device components selected from the range of 1% to 100% or wherein said substrate, said encapsulant layer or both cover or support 10% or more of an exterior area or an interior area of said one or more active or passive electronic device components.

27. The method of claim 1, wherein said one or more inorganic semiconductor components comprise a polycrystalline semiconductor material, single crystalline semiconductor material or a doped polycrystalline or single crystalline semiconductor material, Si, Ga, GaAs, ZnO or any combination of these.

28. The method of claim 2, wherein said one or more metallic conductor components comprise Mg, W, Mo, Fe, Zn or an alloy thereof.

29. The method of claim 2, wherein said one or more inorganic semiconductor components, one or more metallic conductor components or both comprise a component of an electronic device selected from the group consisting of a transistor, a diode, an amplifier, a multiplexer, a light emitting diode, a laser, a photodiode, an integrated circuit, a sensor, a temperature sensor, an electrochemical cell, a thermistor, a heater, a resistive heater, an antenna, a battery, an energy storage system, an actuator, a nanoelectromechanical system or a microelectromechanical system, and an actuator and arrays thereof.

30. The method of claim 1, wherein said device is a communication system, a photonic device, a sensor, an optoelectronic device, a biomedical device, a temperature sensor, a photodetector, a photovoltaic device, a strain gauge, an imaging system, a wireless transmitter, an electrochemical cell, an antenna, a battery, an energy storage system, an actuator, a nanoelectromechanical system or a microelectromechanical system.