Programming schemes for avoidance or recovery from cross-temperature read failures
First Claim
1. A memory system, comprising:
- an interface, configured to communicate with a plurality of memory cells that store data by setting the memory cells to analog voltages representative of respective storage values; and
storage circuitry configured to;
receive data for storage;
measure a temperature at a time of programming the received data; and
program the received data to the memory cells using a first programming scheme when the measured temperature falls within a predefined normal temperature range, and otherwise program the received data to the memory cells using a second programming scheme having a lower net storage utilization than the first programming scheme.
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Accused Products
Abstract
A memory system includes an interface and storage circuitry. The interface is configured to communicate with a plurality of memory cells that store data by setting the memory cells to analog voltages representative of respective storage values. The storage circuitry is configured to receive data for storage, to measure a temperature at a time of programming the received data, and, to program the received data to the memory cells using a first programming scheme when the measured temperature falls within a predefined normal temperature range, and otherwise to program the received data to the memory cells using a second programming scheme having a lower net storage utilization than the first programming scheme.
65 Citations
20 Claims
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1. A memory system, comprising:
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an interface, configured to communicate with a plurality of memory cells that store data by setting the memory cells to analog voltages representative of respective storage values; and storage circuitry configured to; receive data for storage; measure a temperature at a time of programming the received data; and program the received data to the memory cells using a first programming scheme when the measured temperature falls within a predefined normal temperature range, and otherwise program the received data to the memory cells using a second programming scheme having a lower net storage utilization than the first programming scheme. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for data storage, comprising:
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in memory system comprising a plurality of memory cells that store data by setting the memory cells to analog voltages representative of respective storage values, receiving data for storage; measuring a temperature at a time of programming the received data; and programing the received data to the memory cells using a first programming scheme when the measured temperature falls within a predefined normal temperature range, and otherwise programing the received data to the memory cells using a second programming scheme having a lower net storage utilization than the first programming scheme. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification