Magnetic memory
First Claim
1. A magnetic memory comprising:
- a first terminal, a second terminal, and a third terminal;
a first conductive layer including first to fifth regions, the second region being between the first region and the fifth region, the third region being between the second region and the fifth region, the fourth region being between the third region and the fifth region, the first region being electrically connected to the first terminal, the fifth region being electrically connected to the second terminal, and the third region being electrically connected to the third terminal;
a first magnetoresistive element disposed corresponding to the second region, the first magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, and a fourth terminal electrically connected to the first magnetic layer;
a second magnetoresistive element disposed corresponding to the fourth region, the second magnetoresistive element including a third magnetic layer, a fourth magnetic layer disposed between the fourth region and the third magnetic layer, a second nonmagnetic layer disposed between the third magnetic layer and the fourth magnetic layer, and a fifth terminal electrically connected to the third magnetic layer; and
a circuit configured to flow a write current between the first terminal and the third terminal and between the second terminal and the third terminal in a write operation.
1 Assignment
0 Petitions
Accused Products
Abstract
A magnetic memory includes: first to third terminals; a conductive layer including first to fifth regions, the first region being electrically connected to the first terminal, the fifth region being electrically connected to the second terminal, and the third region being electrically connected to the third terminal; a first magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, and a first nonmagnetic layer disposed between the first and the second magnetic layer; a second magnetoresistive element including a third magnetic layer, a fourth magnetic layer disposed between the fourth region and the third magnetic layer, and a second nonmagnetic layer disposed between the third and the fourth magnetic layer; and a circuit flowing a write current between the first and the second terminal and between the second and the third terminal in a write operation.
16 Citations
22 Claims
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1. A magnetic memory comprising:
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a first terminal, a second terminal, and a third terminal; a first conductive layer including first to fifth regions, the second region being between the first region and the fifth region, the third region being between the second region and the fifth region, the fourth region being between the third region and the fifth region, the first region being electrically connected to the first terminal, the fifth region being electrically connected to the second terminal, and the third region being electrically connected to the third terminal; a first magnetoresistive element disposed corresponding to the second region, the first magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, and a fourth terminal electrically connected to the first magnetic layer; a second magnetoresistive element disposed corresponding to the fourth region, the second magnetoresistive element including a third magnetic layer, a fourth magnetic layer disposed between the fourth region and the third magnetic layer, a second nonmagnetic layer disposed between the third magnetic layer and the fourth magnetic layer, and a fifth terminal electrically connected to the third magnetic layer; and a circuit configured to flow a write current between the first terminal and the third terminal and between the second terminal and the third terminal in a write operation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A magnetic memory comprising:
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a first terminal, a second terminal, and a third terminal; a conductive layer including first to fifth regions, the second region being between the first region and the fifth region, the third region being between the second region and the fifth region, the fourth region being between the third region and the fifth region, the first region being electrically connected to the first terminal, the fifth region being electrically connected to the second terminal, and the third region being electrically connected to the third terminal; a first magnetoresistive element disposed corresponding to the second region, the first magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, and a fourth terminal electrically connected to the first magnetic layer; a second magnetoresistive element disposed corresponding to the fourth region, the second magnetoresistive element including a third magnetic layer, a fourth magnetic layer disposed between the fourth region and the third magnetic layer, a second nonmagnetic layer disposed between the third magnetic layer and the fourth magnetic layer, and a fifth terminal electrically connected to the third magnetic layer; a circuit configured to flow a write current between the first terminal and the second terminal in a write operation; and a magnetic field application device configured to apply a first magnetic field to the second magnetic layer and a second magnetic field to the fourth magnetic layer, the first magnetic field including a first component and the second magnetic field including a second component, the first component and the second component being perpendicular to a layer stacking direction of the first magnetoresistive element and the second magnetoresistive element, the first component and the second component being in opposite directions each other. - View Dependent Claims (15, 16)
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17. A magnetic memory comprising:
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a first terminal and a second terminal; a first conductive layer including a first region, a second region, and a third region, the second region being between the first region and the third region, and the first region being electrically connected to the first terminal; a second conductive layer including a fourth region, a fifth region, a sixth region, the fifth region being between the fourth region and the sixth region, and the sixth region being electrically connected to the second terminal; a third terminal electrically connected to the third region and the fourth region; a first magnetoresistive element disposed corresponding to the second region and including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, and a fourth terminal electrically connected to the first magnetic layer; a second magnetoresistive element disposed corresponding to the fifth region and including a third magnetic layer, a fourth magnetic layer disposed between the fifth region and the third magnetic layer, a second nonmagnetic layer disposed between the third magnetic layer and the fourth magnetic layer, and a fifth terminal electrically connected to the third magnetic layer; and a circuit configured to flow a write current between the first terminal and the second terminal via the first conductive layer and the second conductive layer in a write operation. - View Dependent Claims (18, 19)
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20. A magnetic memory comprising:
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a first terminal, a second terminal, and a third terminal; a conductive layer including first to fifth regions, the second region being between the first region and the fifth region, the third region being between the second region and the fifth region, the fourth region being between the third region and the fifth region, the first region being electrically connected to the first terminal, the fifth region being electrically connected to the second terminal, and the third region being electrically connected to the third terminal; a first magnetoresistive element disposed corresponding to the second region, the first magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, and a fourth terminal electrically connected to the first magnetic layer; a second magnetoresistive element disposed corresponding to the fourth region, the second magnetoresistive element including a third magnetic layer, a fourth magnetic layer disposed between the fourth region and the third magnetic layer, a second nonmagnetic layer disposed between the third magnetic layer and the fourth magnetic layer, and a fifth terminal electrically connected to the third magnetic layer; and a circuit configured to flow a write current between the first terminal and the third terminal and between the second terminal and the third terminal in a first write operation for writing to the first magnetoresistive element and the second magnetoresistive element, and to flow a write current between the first terminal and the second terminal in a second write operation for writing to the first magnetoresistive element and the second magnetoresistive element. - View Dependent Claims (21)
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22. A magnetic memory comprising:
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a first terminal and a second terminal; a first conductive layer including first to third regions disposed in a first direction, the second region being between the first region and the third region, and the first region being electrically connected to the first terminal; a second conductive layer including a fourth to sixth regions disposed in the first direction, the fifth region being between the fourth region and the sixth region, and the sixth region being electrically connected to the second terminal; a third conductive layer electrically connected to the third region and the fourth region; a first magnetoresistive element disposed corresponding to the second region and including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, and a third terminal electrically connected to the first magnetic layer; a second magnetoresistive element disposed corresponding to the fifth region and including a third magnetic layer, a fourth magnetic layer disposed between the fifth region and the third magnetic layer, a second nonmagnetic layer disposed between the third magnetic layer and the fourth magnetic layer, and a fourth terminal electrically connected to the third magnetic layer; and a first circuit configured to flow a write current between the first terminal and the second terminal via the first conductive layer, the third conductive layer, and the second conductive layer in a write operation, wherein a direction from the first region to the third region is different from a direction from the fourth region to the sixth region each other.
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Specification