Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls

• US 10,147,497 B2
• Filed: 05/01/2015
• Issued: 12/04/2018
• Est. Priority Date: 05/31/2013
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Baldi, Livio, Mariani, Marcello
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US14/701,870
• Publication Number:
  US 20150235713A1
• Time in Patent Office: 1,313 Days
• CPC Class Codes: G11B 5/4946 for formation or displacement of magnetic domains, e.g. walls, bubbles
• CPC Class Codes: G11C 11/14 using thin-film elements
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: G11C 19/0808 using magnetic domain propagation
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/80 Constructional details

Abstract

A method of forming a memory device having magnetic tracks individually comprising a plurality of magnetic domains having domain walls, includes forming an elevationally outer substrate material of uniform chemical composition. The uniform composition material is partially etched into to form alternating regions of elevational depressions and elevational protrusions in the uniform composition material. A plurality of magnetic tracks is formed over and which angle relative to the alternating regions. Interfaces of immediately adjacent of the regions individually form a domain wall pinning site in individual of the magnetic tracks. Other methods, including memory devices independent of method, are disclosed.

Claims

1. A method of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls, comprising:

forming an elevationally outer substrate material of uniform chemical composition;

partially etching into the uniform composition material to form alternating regions of elevational depressions and elevational protrusions in the uniform composition material; and

forming a plurality of magnetic tracks over and which angle relative to the alternating regions, interfaces of immediately adjacent of the alternating regions individually comprising a domain wall pinning site in individual of the magnetic tracks, the magnetic tracks individual comprising magnetic material elevationally between first material and second material;

the second material being elevationally outward of the first material;

the magnetic material being of different chemical composition from that of each of the first and second materials;

the first material, the second material, and the magnetic material being above the elevational depressions.

2. The method of claim 1 wherein one of the first and second materials is within the depression and the other is not.

3. The method of claim 2 wherein none of the magnetic material is within the depressions.

4. The method of claim 1 wherein none of the magnetic material is within the depressions.

5. A method of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls, comprising:

forming an elevationally outer substrate material of uniform chemical composition;

partially etching into the uniform composition material to form alternating regions of elevational depressions and elevational protrusions in the uniform composition material;

forming a plurality of magnetic tracks over and which angle relative to the alternating regions, interfaces of immediately adjacent of the alternating regions individually comprising a domain wall pinning site in individual of the magnetic tracks, the magnetic tracks individual comprising magnetic material between first material and second material;

the first material, the second material, and the magnetic material being above the elevational depressions; and

at least one of the first and second materials being conductive.

6. The method of claim 5 wherein both of the first and second materials are conductive.

7. The method of claim 6 wherein the first and second materials are of the same composition.

8. The method of claim 6 wherein the first and second materials are of different compositions.