Process for fabricating vertically-aligned gallium arsenide semiconductor nanowire array of large area
First Claim
1. A method for fabricating a group III-V compound semiconductor nanowire array, comprising:
- (a) preparing a patterned palladium containing metal mesh on a surface of a group III-V compound semiconductor substrate; and
(b) wet-etching the III-V compound semiconductor substrate contacting the metal mesh in an etchant by applying an external bias for electrochemical etching to the metal mesh, wherein a voltage or a current is applied to the metal mesh forming an anode and the substrate contacting the anode is etched which lowers the metal mesh, and wherein a portion of the substrate that does not contact the anode is not etched forming a mesh shape.
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Abstract
The present invention relates to a method for manufacturing a GaAs semiconductor nanowire in a bottom-up type and, more particularly, to a method for manufacturing a vertically-aligned gallium arsenide semiconductor nanowire array in a large area by applying a voltage and a current from the outside using a metal thin film, which has been made through an economical method of fabricating a mesh-type metal thin film in a large area, as an anode such that holes (h+) are injected into a gallium arsenide substrate, thereby inducing a wet etching process continuously. The obtained vertically-aligned gallium arsenide semiconductor nanowire of a large area can be applied to fabrication of nanoelements, such as a solar cell, a transistor, and a light-emitting diode.
20 Citations
8 Claims
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1. A method for fabricating a group III-V compound semiconductor nanowire array, comprising:
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(a) preparing a patterned palladium containing metal mesh on a surface of a group III-V compound semiconductor substrate; and (b) wet-etching the III-V compound semiconductor substrate contacting the metal mesh in an etchant by applying an external bias for electrochemical etching to the metal mesh, wherein a voltage or a current is applied to the metal mesh forming an anode and the substrate contacting the anode is etched which lowers the metal mesh, and wherein a portion of the substrate that does not contact the anode is not etched forming a mesh shape. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification