Gate-all-around fin device
First Claim
1. A structure comprising:
- a substrate of a first conductivity type;
a first doped well located in the substrate;
a doped well ring of a second conductivity type located in the substrate adjacent to the first doped well and enclosing a central doped well of the first conductivity type;
a first doped fin of the first conductivity type located over a first portion of the central doped well;
a second doped fin of the second conductivity type located over a second portion of the doped well ring;
a gate structure located adjacent to the first doped fin partially over the doped well ring and partially over the central doped well; and
a source contact located over the first doped fin,wherein the source contact includes alternating p regions and n regions.
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Accused Products
Abstract
A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.
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Citations
10 Claims
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1. A structure comprising:
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a substrate of a first conductivity type; a first doped well located in the substrate; a doped well ring of a second conductivity type located in the substrate adjacent to the first doped well and enclosing a central doped well of the first conductivity type; a first doped fin of the first conductivity type located over a first portion of the central doped well; a second doped fin of the second conductivity type located over a second portion of the doped well ring; a gate structure located adjacent to the first doped fin partially over the doped well ring and partially over the central doped well; and a source contact located over the first doped fin, wherein the source contact includes alternating p regions and n regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification