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Gate-all-around fin device

  • US 10,147,822 B2
  • Filed: 03/30/2017
  • Issued: 12/04/2018
  • Est. Priority Date: 11/19/2014
  • Status: Active Grant
First Claim
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1. A structure comprising:

  • a substrate of a first conductivity type;

    a first doped well located in the substrate;

    a doped well ring of a second conductivity type located in the substrate adjacent to the first doped well and enclosing a central doped well of the first conductivity type;

    a first doped fin of the first conductivity type located over a first portion of the central doped well;

    a second doped fin of the second conductivity type located over a second portion of the doped well ring;

    a gate structure located adjacent to the first doped fin partially over the doped well ring and partially over the central doped well; and

    a source contact located over the first doped fin,wherein the source contact includes alternating p regions and n regions.

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