Vertical topology light emitting device
First Claim
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1. A light emitting device, comprising:
- a metal support structure comprising Cu;
an adhesion structure on the metal support structure;
a first metal layer on the adhesion structure;
a second metal layer comprising Ti on the first metal layer;
a GaN-based semiconductor structure on the second metal layer, wherein the GaN-based semiconductor structure includes a first-type semiconductor layer on the metal support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure including a bottom surface proximate to the metal support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, wherein a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers;
an interface layer comprising Ti on the GaN-based semiconductor structure; and
a contact pad on the interface layer,wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure, andwherein a second thickness of the metal support structure is 0.5 times or less than a width of the top surface of the GaN-based semiconductor structure.
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Abstract
A light emitting device includes an adhesion structure on a metal support structure; a first metal layer on the adhesion structure; a second metal layer comprising Ti on the first metal layer; a GaN-based semiconductor structure on the second metal layer, which includes a first-type semiconductor layer on the metal support structure, an active layer on the first-type semiconductor layer, a second-type semiconductor layer on the active layer, a bottom surface proximate to the metal support structure, a top surface, and a side surface, in which a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers; an interface layer comprising Ti; and a contact pad, in which the second metal layer directly contacts the GaN-based semiconductor structure, and a second thickness of the metal support structure is 0.5 times or less than a width of the top surface.
133 Citations
20 Claims
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1. A light emitting device, comprising:
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a metal support structure comprising Cu; an adhesion structure on the metal support structure; a first metal layer on the adhesion structure; a second metal layer comprising Ti on the first metal layer; a GaN-based semiconductor structure on the second metal layer, wherein the GaN-based semiconductor structure includes a first-type semiconductor layer on the metal support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure including a bottom surface proximate to the metal support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, wherein a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers; an interface layer comprising Ti on the GaN-based semiconductor structure; and a contact pad on the interface layer, wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure, and wherein a second thickness of the metal support structure is 0.5 times or less than a width of the top surface of the GaN-based semiconductor structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A light emitting device, comprising:
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a metal support structure; an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer; a first metal layer on the adhesion structure; a second metal layer on the first metal layer; a GaN-based semiconductor structure on the second metal layer, wherein the GaN-based semiconductor structure includes a first-type semiconductor layer on the metal support structure, an active layer emitting a light on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure including a bottom surface proximate to the metal support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, wherein the light passes through the top surface of the GaN-based semiconductor structure and the side surface of the GaN-based semiconductor structure, wherein a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers, and wherein the first thickness of the GaN-based semiconductor structure is less than 1/20 thick of a second thickness of the metal support structure, an interface layer on the GaN-based semiconductor structure; and a contact pad on the interface layer, wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure, and wherein the second thickness of the metal support structure is 0.5 times or less than a width of the top surface of the GaN-based semiconductor structure. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A light emitting device, comprising:
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a support structure; an adhesion structure comprising Au on the support structure; a first metal layer on the adhesion structure; a second metal layer comprising Ti on the first metal layer; a GaN-based semiconductor structure on the second metal layer, wherein the GaN-based semiconductor structure includes a first-type semiconductor layer on the support structure, an active layer emitting a light on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure including a bottom surface proximate to the support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, wherein the light passes through the top surface of the GaN-based semiconductor structure and the side surface of the GaN-based semiconductor structure, wherein a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers, and wherein the first thickness of GaN-based semiconductor structure is less than 1/20 thick of a second thickness of the support structure, an interface layer on the GaN-based semiconductor structure; and a contact pad on the interface layer, wherein the second metal layer comprises a portion that directly contacts the GaN-based semiconductor structure, and wherein the second thickness of the support structure is 0.5 times or less than a width of top surface of the GaN-based semiconductor structure. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification
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Current AssigneeSuzhou Lekin Semiconductor Company Limited
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Original AssigneeLG Innotek Company Limited (LG Corporation)
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InventorsYoo, Myung Cheol
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Primary Examiner(s)SMITH, BRADLEY
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Application NumberUS15/813,396Publication NumberTime in Patent Office384 DaysField of SearchNoneUS Class CurrentCPC Class CodesH01L 33/007 comprising nitride compoundsH01L 33/0093 Wafer bonding; Removal of t...H01L 33/0095 Post-treatment of devices, ...H01L 33/04 with a quantum effect struc...H01L 33/12 with a stress relaxation st...H01L 33/14 with a carrier transport co...H01L 33/32 containing nitrogenH01L 33/38 with a particular shapeH01L 33/405 Reflective materialsH01L 33/42 Transparent materialsH01L 33/46 Reflective coating, e.g. di...H01L 33/54 having a particular shapeH01L 33/60 Reflective elementsH01L 33/62 Arrangements for conducting...H01L 33/641 characterized by the materialsH01L 33/647 the elements conducting ele...
