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Manufacturing method of flip-chip structure of group III semiconductor light emitting device

  • US 10,147,849 B2
  • Filed: 05/05/2016
  • Issued: 12/04/2018
  • Est. Priority Date: 05/05/2015
  • Status: Active Grant
First Claim
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1. A manufacturing method of a flip-chip structure of a group III semiconductor light emitting device, the manufacturing method comprising:

  • providing a substrate and growing a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate sequentially from a bottom to a top to form an epitaxial structure, wherein a top surface of the epitaxial structure is a top surface of the p-type nitride semiconductor layer;

    depositing a transparent conductive layer on the top surface of the p-type nitride semiconductor layer, defining a pattern of a linear convex mesa, etching the transparent conductive layer, the p-type nitride semiconductor layer and the active layer to expose the n-type nitride semiconductor layer, thereby obtaining the linear convex mesa, wherein the linear convex mesa comprises a first top surface, a side surface and a second top surface, the first top surface and the second top surface individually connects with the side surface to form an L-shaped structure, the first top surface of the linear convex mesa comprising a top surface of the p-type nitride semiconductor layer, the second top surface of the linear convex mesa being a top surface of the n-type nitride semiconductor layer;

    defining an isolation groove by etching the n-type nitride semiconductor layer and the buffer layer to expose the substrate;

    depositing a first insulation layer structure formed by a Bragg reflective layer, a metal layer and a multilayer of oxide insulation;

    wherein the Bragg reflective layer is deposited before the metal layer is deposited, then the metal layer is deposited, and then the multilayer of oxide insulation is deposited, a connection pattern between a p-type contact metal and the transparent conductive layer and a contact pattern between an n-type contact metal and the second top surface of the linear convex mesa are defined, and then a connecting pattern between the multilayer of oxide insulation and the Bragg reflective layer are continuously etched to form the first insulation layer structure;

    defining a pattern of the p-type contact metal and a pattern of the n-type contact metal, and then depositing the p-type contact metal and the n-type contact metal, wherein, a bottom surface of the p-type contact metal is located on a surface of the transparent conductive layer and a top surface of the first insulation layer structure, and a bottom surface of the n-type contact metal is located on the second top surface of the linear convex mesa and a top surface of the first insulation layer structure;

    depositing a second insulation layer structure, wherein a pattern is defined, the pattern is used for accessing the p-type contact metal and the n-type contact metal with an opening, and then an opening pattern of the second insulation layer structure is etched; and

    defining a pattern of a flip-chip p-type electrode and a flip-chip n-type electrode, and depositing the flip-chip p-type electrode and the flip-chip n-type electrode on the second insulation layer structure.

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