System and method for providing color light sources in proximity to predetermined wavelength conversion structures

• US 10,147,850 B1
• Filed: 11/03/2014
• Issued: 12/04/2018
• Est. Priority Date: 02/03/2010
• Status: Active Grant

• Current Assignee: Korrus Incorporated (MKD Electric, Inc.)
• Original Assignee: Soraa, Inc.
• Inventors: Krames, Michael R., Trottier, Troy, Steranka, Frank M., Houck, William D., Chakraborty, Arpan
• Primary Examiner(s): Santiago, Mariceli
• Application Number:
  US14/531,545
• Time in Patent Office: 1,492 Days
• CPC Class Codes: F21K 9/00 Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
• CPC Class Codes: F21K 9/232 specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
• CPC Class Codes: F21K 9/233 specially adapted for generating a spot light distribution, e.g. for substitution of reflector lamps
• CPC Class Codes: F21K 9/235 Details of bases or caps, i.e. the parts that connect the light source to a fitting; Arrangement of components within bases or caps F21K9/238 takes precedence
• CPC Class Codes: F21K 9/60 Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
• CPC Class Codes: F21K 9/64 using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
• CPC Class Codes: F21V 19/006 of point-like light sources, e.g. incandescent or halogen lamps, with screw-threaded or bayonet base of sources having contact pins, wires or blades F21V19/0005; of LEDs or sources mounted on printed-circuit board F21V19/001
• CPC Class Codes: F21V 23/06 the elements being coupling devices , e.g. connectors
• CPC Class Codes: F21V 29/70 characterised by passive heat-dissipating elements, e.g. heat-sinks
• CPC Class Codes: F21V 29/74 with fins or blades
• CPC Class Codes: F21V 3/00 Globes; Bowls; Cover glasses with refracting properties F21V5/00; with reflecting properties F21V7/00; characterised by cooling arrangements F21V29/506
• CPC Class Codes: F21V 7/00 Reflectors for light sources characterised by cooling arrangements F21V29/505
• CPC Class Codes: F21V 9/08 for producing coloured light, e.g. monochromatic; for reducing intensity of light with provision for controlling the colour F21V9/40
• CPC Class Codes: F21V 9/38 Combination of two or more photoluminescent elements of different materials
• CPC Class Codes: F21Y 2101/00 Point-like light sources
• CPC Class Codes: F21Y 2105/10 comprising a two-dimensional array of point-like light-generating elements
• CPC Class Codes: F21Y 2105/12 characterised by the geometrical disposition of the light-generating elements, e.g. arranging light-generating elements in differing patterns or densities
• CPC Class Codes: F21Y 2113/13 comprising an assembly of point-like light sources
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 27/156 : two-dimensional arrays
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/504 : Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/505 : characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/507 : the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 : Reflective elements
• CPC Class Codes: H05B 45/10 : Controlling the intensity of the light

Abstract

An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.

Claims

1. An optical device comprising:

a submount comprising a mounting surface;

at least one first light emitting diode source, the at least one first light emitting diode source configured to emit radiation characterized by a first wavelength within a range from about 430 nm to about 480 nm, wherein the at least one first light emitting diode source is disposed on the mounting surface;

at least one second light emitting diode source configured to emit radiation characterized by a second wavelength within a range from 405 nm to 420 nm, wherein the at least one second light emitting diode source is disposed on the mounting surface;

a first wavelength-converting material positioned in a direct optical path of radiation from the at least one first light emitting diode source and configured to convert radiation from the first wavelength to radiation at a wavelength within a range from about 500 nm to about 600 nm;

a second wavelength-converting material configured to convert radiation from at least one of the first wavelength or the second wavelength to radiation at a wavelength within a range from about 590 nm to about 650 nm, and

wherein the optical device is configured to output radiation from at least the first light emitting diode source, the at least one second light emitting diode source, and the first and second wavelength-converting materials.

2. The optical device of claim 1, wherein the first wavelength-converting material is selected from at least one of garnets doped at least with at least one of Ce³⁺;

nitridosilicates, oxynitridosilicates or oxynitridoaluminosilicates doped at least with Ce³⁺;

chalcogenides doped at least with Ce³⁺;

silicates or fluorosilicates doped at least with Eu²⁺;

oxynitridosilicates, oxynitridoaluninosilicates or sialons doped at least with Eu²⁺;

carbidooxynitridosilicates doped at least with Eu²⁺;

aluminates doped at least with Eu²⁺; and

phosphates or apatites doped at least with Eu²⁺.

3. The optical device of claim 1, wherein the second wavelength-converting material is selected from at least one of nitridosilicates, oxynitridosilicates or carbidonitridosilicates doped at least with Eu²⁺;

chalcogenides doped at least with Eu²⁺;

phosphates or apatites doped at least with Eu²⁺ and oxides, oxyfluorides or complex fluorides doped at least with Mn⁴⁺.

4. The optical device of claim 1, wherein the first wavelength-converting material is selected from at least one of:

(Ba,Sr,Ca,Mg)₅(PO₄)₃(Cl,F,Br,OH);

Eu²⁺,

(Ca,Sr,Ba)₃MgSi₂O₈;

Eu²⁺,Mn²⁺,

(Ba,Sr,Ca)MgAl₁₀O₁₇;

Eu²⁺,Mn²⁺,

(Mg,Ca,Sr,Ba,Zn)₂SiO₄;

Eu²⁺,

(Sr,Ca,Ba)(Al,Ga)₂S₄;

Eu²⁺,

(Ca,Sr)S;

Ce³⁺,

(Y,Gd,Tb,La,Sm,Pr,Lu)₃(Sc,Al,Ga)₅O₁₂;

Ce³⁺,

a group;

M(II)<sub>1−

x−

z</sub>M(I)_zM(III)<sub>x−

xy−

z</sub>Si<sub>1−

x+xy+z</sub>N<sub>2−

x−

xy−

2w/3</sub>C_xyO<sub>w−

v/2</sub>H_v;

A; and

M(II)<sub>1−

x−

z</sub>M(I)_zM(III)<sub>x−

xy−

z</sub>Si<sub>1−

x+xy+z</sub>N<sub>2−

x−

xy−

2w/3−

v/3</sub>C_xyO_wH_v;

A,

wherein 0<

x<

1, 0<

y<

1, 0≤

z<

1, 0≤

v<

1, 0<

w<

1, x+z<

1, x>

xy+z, and 0<

x−

xy−

z<

1, M(II) is at least one divalent cation, M(I) is at least one monovalent cation, M(III) is at least one trivalent cation,

H is at least one monovalent anion, and A is Eu²⁺,

Ce_x(Mg,Ca,Sr,Ba)_y(Sc,Y,La,Gd,Lu)<sub>1−

x−

y</sub>Al(Si<sub>6−

z+y</sub>Al<sub>z−

y</sub>(N<sub>10−

z</sub>O_z), where x<

1, y≥

0 and z=1,

(Mg,Ca,Sr,Ba)(Y,Sc,Gd,Tb,La,Lu)₂S₄;

Ce³⁺,

(Ba,Sr,Ca)_xxSi_yN_z;

Eu²⁺, where 2x+4y=3z,

(Y,Sc,Lu,Gd)<sub>2−

n</sub>Ca_nSi₄N_6+nC<sub>1−

n</sub>;

Ce³⁺, wherein 0≤

n≤

0.5,

(Lu,Ca,Li,Mg,Y) alpha-SiAlON doped with Eu²⁺ and/or Ce³⁺,

(Ca,Sr,Ba)SiO₂N₂;

Eu²⁺,Ce³⁺,

CaAlSi(ON)₃;

Eu²⁺,

(Y,La,Lu)Si₃N₅;

Ce³⁺, and

(La,Y,Lu)₃Si₆N₁₁;

Ce³⁺.

5. The optical device of claim 1, wherein the second wavelength-converting material is selected from at least one of:

(Ba,Sr,Ca,Mg)₅(PO4)₃(Cl,F,Br,OH);

Eu²⁺, Mn²⁺,

(Ca,Sr,Ba)₃MgSi₂O₈;

Eu²⁺, Mn²⁺,

(Ba,Sr,Ca)MgAl₁₀O₁₇;

Eu²⁺, Mn²⁺,

(Na,K,Rb,Cs)₂(Si,Ge,Ti,Zr,Hf,Sn)F₆;

Mn⁴⁺,

(Mg,Ca,Zr,Ba,Zn)(Si,Ge,Ti,Zr,Hf,Sn)F₆;

Mn⁴⁺,

(Ca,Sr)S;

Eu²⁺,

a group;

Ca<sub>1−

x</sub>Al<sub>x−

xy</sub>Si<sub>1−

x+xy</sub>N<sub>2−

x−

xy</sub>C_xy;

A 

 

(1),

Ca<sub>1−

x−

z</sub>Na_zM(III)<sub>x−

xy−

z</sub>Si<sub>1−

x+xy+z</sub>N<sub>2−

x−

xy</sub>C_xy;

A 

 

(2),

M(II)<sub>1−

x−

z</sub>M(I)_zM(III)<sub>x−

xy−

z</sub>Si<sub>1−

x+xy+z</sub>N<sub>2−

x−

xy</sub>C_xy;

A 

 

(3),

wherein 0<

x<

1, 0<

y<

1, 0≤

z<

1, 0≤

v<

1, 0<

w<

1, x+z<

1, X>

xy+z, and 0<

x−

xy−

z<

1, M(II) is at least one divalent cation, M(I) is at least one monovalent cation, M(III) is at least one trivalent cation,

H is at least one monovalent anion, and A is Eu²⁺,

(Ba,Sr,Ca)_xxSi_yN_z;

Eu²⁺, where 2x+4y=3z; and

(Sr,Ca)AlSiN₃;

Eu^2+.

6. The optical device of claim 1, comprising at least one third light emitting diode source configured to emit radiation characterized by a third wavelength, the third wavelength being longer than the first wavelength, wherein the at least one third light emitting diode source is disposed on the mounting surface.

7. The optical device of claim 1, wherein the mounting surface comprises a single mounting surface.

8. An optical system comprising the optical device of claim 1.

9. The optical device of claim 1, wherein the resulting radiation is emanated through a light emitting surface, the light emitting surface having a predetermined shape selected from a square, a rectangle, a hexagon, a regular polygon, and a circle.

10. The optical device of claim 1, wherein a plurality of second light emitting diode sources is electrically connected in series.

11. The optical device of claim 1, said first wavelength-converting material is disposed over said at least one first light emitting diode source, thereby positioning said first wavelength-converting material in said direct optical path of radiation.

12. The optical device of claim 1, comprising the second wavelength-converting material configured to convert radiation from the first wavelength and from the second wavelength to radiation at a wavelength within a range from about 590 nm to about 650 nm.

13. The optical device of claim 12, wherein the first wavelength-converting material is configured to convert radiation from the first wavelength and from the second wavelength.

14. The optical device of claim 13, wherein the optical device is configured to emit substantially white light.

15. The optical device of claim 12, said at least one first light emitting diode source is a plurality of first light emitting diode sources.

16. The optical device of claim 15, wherein,

the plurality of first light emitting diode sources comprises n first light emitting diodes;

the at least one second light emitting diode source comprises m second light emitting diodes; and

a ratio of the number n to the number m (n;

m) is greater than 1.

17. The optical device of claim 15, wherein,

the plurality of first light emitting diode sources comprises n first light emitting diodes;

the at least one second light emitting diode source comprises m second light emitting diodes; and

a ratio of the number n to the number m (n;

m) is equal to 1.

18. The optical device of claim 15, wherein,

the plurality of first light emitting diode sources comprises n first light emitting diodes;

the at least one second light emitting diode source comprises m second light emitting diodes; and

a ratio of the number n to the number m (n;

m) is less than 1.

19. The optical device of claim 15, wherein the plurality of first light emitting diode sources and the at least one second light emitting diode source comprise a gallium- and nitrogen-containing material.

20. The optical device of claim 15, where the first wavelength-converting material is remote from the plurality of first light emitting diode sources.

21. The optical device of claim 15, wherein the plurality of first light emitting diode sources and the at least one second light emitting diode source are connected to a common electrical circuit enabling electrical injection.

22. The optical device of claim 15, wherein the plurality of first light emitting diode sources is electrically connected in series.

23. The optical device of claim 15, wherein at least two LEDs selected from the plurality of first light emitting diode sources or from the at least one second light emitting diode source are electrically connected in parallel.