Magnetic memory devices

• US 10,147,871 B2
• Filed: 03/30/2017
• Issued: 12/04/2018
• Est. Priority Date: 08/31/2016
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Ahn, Sungmin
• Primary Examiner(s): Tran, Tran
• Application Number:
  US15/473,747
• Publication Number:
  US 20180062070A1
• Time in Patent Office: 614 Days
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A magnetic memory device may include a magnetic tunnel junction pattern that comprises a tunnel barrier pattern, a first magnetic pattern and a second magnetic pattern, a tunnel barrier pattern between the first and second magnetic patterns, a non-magnetic pattern on the second magnetic pattern, and a magnetic material between at least a distal portion of the non-magnetic pattern and the second magnetic pattern. The magnetic material may include a set of fine magnetic patterns between the second magnetic pattern and the non-magnetic pattern, the set of fine magnetic patterns including a pattern of fine magnetic patterns spaced apart from each other in a direction parallel to an interface between the second magnetic pattern and the non-magnetic pattern. The magnetic material may include magnetic atoms, and the non-magnetic material may include a proximate portion that is proximate to the second magnetic pattern, the proximate portion doped with the magnetic atoms.

Claims

1. A magnetic memory device, comprising:

a substrate; and

a plurality of magnetic tunnel junction patterns on the substrate, each magnetic tunnel junction pattern of the plurality of magnetic tunnel junction patterns including,

a first magnetic pattern and a second magnetic pattern stacked in a direction perpendicular to a top surface of the substrate;

a tunnel barrier pattern between the first magnetic pattern and the second magnetic pattern;

a non-magnetic pattern on the second magnetic pattern in the direction perpendicular to the top surface of the substrate, such that the second magnetic pattern is between the non-magnetic pattern and the tunnel barrier pattern; and

a set of fine magnetic patterns between the second magnetic pattern and the non-magnetic pattern, the set of fine magnetic patterns including a pattern of fine magnetic patterns spaced apart from each other in a direction parallel to the top surface of the substrate.

2. The magnetic memory device of claim 1, wherein,

each fine magnetic pattern of the set of fine magnetic patterns includes a magnetic material, the magnetic material associated with a lattice constant, and

each fine magnetic pattern has a thickness that is less than the lattice constant of the magnetic material.

3. The magnetic memory device of claim 1, wherein each fine magnetic pattern has a magnetization direction perpendicular to the top surface of the substrate.

4. The magnetic memory device of claim 1, wherein the set of fine magnetic patterns is on the second magnetic pattern.

5. The magnetic memory device of claim 4, wherein the non-magnetic pattern is between adjacent fine magnetic patterns.

6. The magnetic memory device of claim 4, wherein the non-magnetic pattern covers top and side surfaces of the fine magnetic patterns.

7. The magnetic memory device of claim 1, wherein the set of fine magnetic patterns is on the non-magnetic pattern.

8. The magnetic memory device of claim 7, wherein the second magnetic pattern covers top and side surfaces of the fine magnetic patterns.

9. The magnetic memory device of claim 1, wherein the non-magnetic pattern includes at least one of tantalum (Ta), titanium (Ti), and magnesium (Mg).

10. A magnetic memory device, comprising:

a substrate; and

a plurality of magnetic tunnel junction patterns on the substrate, each magnetic tunnel junction pattern of the plurality of magnetic tunnel junction patterns including,

a first magnetic pattern and a second magnetic pattern stacked in a direction perpendicular to a top surface of the substrate;

a tunnel barrier pattern between the first magnetic pattern and the second magnetic pattern; and

a non-magnetic pattern on the second magnetic pattern in the direction perpendicular to the top surface of the substrate, such that the second magnetic pattern is between the non-magnetic pattern and the tunnel barrier pattern, at least a portion of the non-magnetic pattern doped with magnetic atoms.

11. The magnetic memory device of claim 10, wherein,

the first magnetic pattern is between the substrate and the tunnel barrier pattern,

the non-magnetic pattern includes a proximate portion that is adjacent to a top surface of the second magnetic pattern, and

the proximate portion is doped with the magnetic atoms.

12. The magnetic memory device of claim 11, wherein,

the magnetic atoms have a doping thickness that is less than a lattice constant associated with the magnetic atoms, and

the doping thickness extends from a bottom surface of the non-magnetic pattern along the direction perpendicular to the top surface of the substrate.

13. The magnetic memory device of claim 10, wherein,

the second magnetic pattern is between the substrate and the tunnel barrier pattern,

the non-magnetic pattern includes a proximate portion that is adjacent to a bottom surface of the second magnetic pattern, and

the proximate portion is doped with the magnetic atoms.

14. The magnetic memory device of claim 13, wherein,

the magnetic atoms have a doping thickness less than a lattice constant associated with the magnetic atoms, and

the doping thickness extends from a top surface of the non-magnetic pattern along the direction perpendicular to the top surface of the substrate.

15. The magnetic memory device of claim 10, wherein the magnetic atoms have a magnetization direction that is perpendicular to the top surface of the substrate.

16. A magnetic memory device, comprising:

a first magnetic pattern;

a second magnetic pattern on the first magnetic pattern;

a tunnel barrier pattern between the first magnetic pattern and the second magnetic pattern;

a non-magnetic pattern on the second magnetic pattern; and

a magnetic material between at least a distal portion of the non-magnetic pattern and the second magnetic pattern.

17. The magnetic memory device of claim 16, wherein,

the magnetic material is associated with a lattice constant, and

the magnetic material is included in a structure having a thickness that is less than the lattice constant of the magnetic material.

18. The magnetic memory device of claim 16, wherein,

the magnetic material includes a set of fine magnetic patterns between the second magnetic pattern and the non-magnetic pattern, the set of fine magnetic patterns including a pattern of fine magnetic patterns spaced apart from each other in a direction parallel to an interface between the second magnetic pattern and the non-magnetic pattern.

19. The magnetic memory device of claim 18, wherein,

the set of fine magnetic patterns is on the second magnetic pattern.

20. The magnetic memory device of claim 16, wherein,

the magnetic material includes magnetic atoms, and

the non-magnetic pattern includes a proximate portion that is proximate to the second magnetic pattern, the proximate portion doped with the magnetic atoms.