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Magnetic memory devices

  • US 10,147,871 B2
  • Filed: 03/30/2017
  • Issued: 12/04/2018
  • Est. Priority Date: 08/31/2016
  • Status: Active Grant
First Claim
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1. A magnetic memory device, comprising:

  • a substrate; and

    a plurality of magnetic tunnel junction patterns on the substrate, each magnetic tunnel junction pattern of the plurality of magnetic tunnel junction patterns including,a first magnetic pattern and a second magnetic pattern stacked in a direction perpendicular to a top surface of the substrate;

    a tunnel barrier pattern between the first magnetic pattern and the second magnetic pattern;

    a non-magnetic pattern on the second magnetic pattern in the direction perpendicular to the top surface of the substrate, such that the second magnetic pattern is between the non-magnetic pattern and the tunnel barrier pattern; and

    a set of fine magnetic patterns between the second magnetic pattern and the non-magnetic pattern, the set of fine magnetic patterns including a pattern of fine magnetic patterns spaced apart from each other in a direction parallel to the top surface of the substrate.

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