Display device

• US 10,149,366 B1
• Filed: 06/08/2018
• Issued: 12/04/2018
• Est. Priority Date: 06/30/2017
• Status: Active Grant

• Current Assignee: InnoLux Corporation
• Original Assignee: InnoLux Corporation
• Inventors: Tsai, Tsung-Han, Lee, Kuan-Feng, Wu, Yu-Hsien, Wu, Yuan-Lin
• Primary Examiner(s): Hines, Anne
• Application Number:
  US16/003,246
• Time in Patent Office: 179 Days
• CPC Class Codes: G02F 1/13452 Conductors connecting driver circuitry and terminals of panels
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G09G 2300/0426 Layout of electrodes and connections
• CPC Class Codes: G09G 3/32 semiconductive, e.g. using light-emitting diodes [LED]
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/00 Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof H10K50/00 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components having potential barriers, specially adapted for light emission H01L27/15; semiconductor lasers H01S5/00
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H05B 33/22 characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 2102/351 Thickness
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 50/854 : comprising scattering means
• CPC Class Codes: H10K 59/12 : Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 : Manufacture or treatment
• CPC Class Codes: H10K 59/1213 : the pixel elements being TFTs
• CPC Class Codes: H10K 59/124 : Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/179 : Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/8051 : Anodes
• CPC Class Codes: H10K 59/877 : comprising scattering means
• CPC Class Codes: H10K 71/00 : Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 77/111 : Flexible substrates
• CPC Class Codes: Y02E 10/549 : Organic PV cells

Abstract

A display device is provided. The display device includes a light emitting unit disposed on a substrate and electrically connected to a driving circuit. The light emitting unit includes a first electrode electrically connected to a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, a quantum well structure sandwiched between the first semiconductor layer and the second semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The first electrode has a first surface farthest from the first semiconductor layer. The second electrode has a second surface farthest from the first semiconductor layer. A roughness of the second surface is greater than a roughness of the first surface.

Claims

1. A display device, comprising:

a substrate; and

a light emitting unit disposed on the substrate and electrically connected to a driving circuit, wherein the light emitting unit comprises a first electrode electrically connected to a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, a quantum well structure sandwiched between the first semiconductor layer and the second semiconductor layer, and a second electrode electrically connected to the second semiconductor layer;

wherein the first electrode has a first surface farthest from the first semiconductor layer, the second electrode has a second surface farthest from the first semiconductor layer, and a roughness of the second surface is greater than a roughness of the first surface.

2. The display device according to claim 1, wherein the driving circuit comprises a thin film transistor.

3. The display device according to claim 2, wherein the thin film transistor comprises an active layer that comprises amorphous silicon, polysilicon, or metal oxide semiconductor.

4. The display device according to claim 1, further comprising a scattering layer disposed on the light emitting unit.

5. The display device according to claim 4, wherein the scattering layer comprises inorganic materials or organic materials.

6. The display device according to claim 5, wherein the organic materials comprise epoxy.

7. The display device according to claim 4, wherein the scattering layer comprises transparent particles or quantum dots transparent particles.

8. The display device according to claim 7, wherein the transparent particles comprise silicon oxide, silicon nitride, or metal oxide.

9. The display device according to claim 7, wherein the quantum dot comprises a core formed of CdSe, CdTe, CdS, ZnS, ZnSe, ZnO, ZnTe, InAs, InP, or GaP, and a shell formed of ZnS, ZnSe, GaN, or GaP.

10. The display device according to claim 1, further comprising a conductive layer in contact with the second electrode, wherein the conductive layer has a surface farthest from the first semiconductor layer and the surface of the conductive layer is a rough surface.

11. The display device according to claim 10, wherein the conductive layer comprises indium-zinc-oxide, indium-tin-oxide, or indium-galium-zinc-oxide.

12. The display device according to claim 1, further comprising:

a conductive layer in contact with the second electrode; and

a scattering layer partially covering the conductive layer.

13. The display device according to claim 12, wherein the scattering layer has a surface farthest from the first semiconductor layer and the surface of the scattering layer is a rough surface.

14. The display device according to claim 13, wherein the conductive layer has a surface farthest from the first semiconductor layer and the surface of the conductive layer is a rough surface.

15. The display device according to claim 1, further comprising a conductive layer in contact with the second electrode, wherein the conductive layer has a surface farthest from the first semiconductor layer and the surface of the conductive layer is a substantially smooth surface.

16. The display device according to claim 1, further comprising a conductive layer electrically connected between the light emitting unit and the driving circuit.

17. The display device according to claim 16, further comprising a scattering layer disposed on the conductive layer and below the light emitting unit.

18. The display device according to claim 16, further comprising a scattering layer disposed on the conductive layer and surrounding at least a part of the light emitting unit.

19. The display device according to claim 16, further comprising a planarization layer disposed on the substrate and having a recess between the light emitting unit and the driving circuit.

20. The display device according to claim 19, wherein the conductive layer is conformally disposed in the recess.