Method for sensing memory element coupled to selector device

• US 10,153,017 B2
• Filed: 09/14/2016
• Issued: 12/11/2018
• Est. Priority Date: 09/14/2016
• Status: Active Grant

• Current Assignee: Avalanche Technology Incorporated
• Original Assignee: Avalanche Technology Incorporated
• Inventors: Yang, Hongxin, Wang, Xiaobin, Zhang, Jing, Hao, Xiaojie, Wang, Zihui, Satoh, Kimihiro
• Primary Examiner(s): Graham, Kretelia
• Application Number:
  US15/264,847
• Publication Number:
  US 20180075891A1
• Time in Patent Office: 818 Days
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1673 Reading or sensing circuits or methods
• CPC Class Codes: H10B 61/10 comprising components having two electrodes, e.g. diodes or MIM elements
• CPC Class Codes: H10B 63/80 Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/80 Constructional details

Abstract

The present invention is directed to a method for sensing the resistance state of a memory cell that includes an MTJ memory element coupled to a two-terminal selector element in series. The method includes the steps of raising a cell voltage across the memory cell above a threshold voltage for the selector element to become conductive; decreasing the cell voltage to a first sensing voltage and measuring a first sensing current passing through the memory cell, the selector element being nominally conductive irrespective of the resistance state of the MTJ memory element at the first sensing voltage; and further decreasing the cell voltage to a second sensing voltage and measuring a second sensing current, the selector element being nominally conductive if the MTJ memory element is in the low resistance state or nominally insulative if the MTJ memory element is in the high resistance state at the second sensing voltage.

Claims

1. A method for sensing a resistance state of a magnetic tunnel junction (MTJ) memory element in a magnetic memory cell that further includes a two-terminal selector element coupled to the MTJ memory element in series, the MTJ memory element having a high resistance mode and a low resistance mode, the two-terminal selector element having an on-state that is conductive and an off-state that is insulative, the method comprising the steps of:

turning on the selector element by raising a cell voltage across the magnetic memory cell above a threshold voltage for the selector element to become conductive;

decreasing the cell voltage to a first sensing voltage and measuring a first sensing current passing through the magnetic memory cell, the two-terminal selector element being conductive irrespective of the resistance state of the MTJ memory element at the first sensing voltage; and

further decreasing the cell voltage to a second sensing voltage and measuring a second sensing current passing through the magnetic memory cell, the two-terminal selector element being conductive if the MTJ memory element is in the low resistance mode or insulative if the MTJ memory element is in the high resistance mode at the second sensing voltage, calculating a difference between the first sensing current and the second sensing current;

comparing the difference to a reference value;

concluding the MTJ memory element is in the high resistance mode if the difference is greater than the reference value; and

concluding the MTJ memory element is in the low resistance mode if the difference is less than the reference value.

3. The method claim 1, further comprising the step of measuring a third sensing current at a third sensing voltage between the first and second sensing voltages.

4. The method claim 1, further comprising the steps of measuring multiple sensing currents at multiple sensing voltage between the first and second sensing voltages.

5. The method of claim 1, wherein a resistance ratio of the high resistance mode to the low resistance mode of the MTJ memory element is between 2 to 4.

6. The method of claim 1, wherein a resistance ratio of the high resistance mode to the low resistance mode of the MTJ memory element is between 1.5 to 5.

7. The method of claim 1, wherein the MTJ memory element includes:

a magnetic free layer having a variable magnetization direction perpendicular to a layer plane thereof;

a magnetic reference layer having a first invariable magnetization direction perpendicular to a layer plane thereof;

a tunnel junction layer interposed between the magnetic free layer and the magnetic reference layer;

a magnetic fixed layer having a second invariable magnetization direction opposite to the first invariable magnetization direction; and

an anti-ferromagnetic coupling layer interposed between the magnetic reference layer and the magnetic fixed layer.

2. A method for sensing a resistance state of a magnetic tunnel junction (MTJ) memory element in a magnetic memory cell that further includes a two-terminal selector element coupled to the MTJ memory element in series, the MTJ memory element having a high resistance mode and a low resistance mode, the two-terminal selector element having an on-state that is conductive and an off-state that is insulative, the method comprising the steps of:

turning on the selector element by raising a cell voltage across the magnetic memory cell above a threshold voltage for the selector element to become conductive;

decreasing the cell voltage to a first sensing voltage and measuring a first sensing current passing through the magnetic memory cell, the two-terminal selector element being conductive irrespective of the resistance state of the MTJ memory element at the first sensing voltage; and

further decreasing the cell voltage to a second sensing voltage and measuring a second sensing current passing through the magnetic memory cell, the two-terminal selector element being conductive if the MTJ memory element is in the low resistance mode or insulative if the MTJ memory element is in the high resistance mode at the second sensing voltage, calculating a slope between a first point defined by the first sensing voltage and the first sensing current and a second point defined by the second sensing voltage and the second sensing current;

comparing the slope to a reference slope value;

concluding the MTJ memory element is in the high resistance mode if the slope is greater than the reference slope value; and

concluding the MTJ memory element is in the low resistance mode if the slope is less than the reference slope value.

8. The method claim 2, further comprising the step of measuring a third sensing current at a third sensing voltage between the first and second sensing voltages.

9. The method claim 2, further comprising the steps of measuring multiple sensing currents at multiple sensing voltage between the first and second sensing voltages.

10. The method of claim 2, wherein a resistance ratio of the high resistance mode to the low resistance mode of the MTJ memory element is between 2 to 4.

11. The method of claim 2, wherein a resistance ratio of the high resistance mode to the low resistance mode of the MTJ memory element is between 1.5 to 5.

12. The method of claim 2, wherein the MTJ memory element includes:

a magnetic free layer having a variable magnetization direction perpendicular to a layer plane thereof;

a magnetic reference layer having a first invariable magnetization direction perpendicular to a layer plane thereof;

a tunnel junction layer interposed between the magnetic free layer and the magnetic reference layer;

a magnetic fixed layer having a second invariable magnetization direction opposite to the first invariable magnetization direction; and

an anti-ferromagnetic coupling layer interposed between the magnetic reference layer and the magnetic fixed layer.