Semiconductor device and method for fabricating the same
First Claim
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1. A method for fabricating semiconductor device, comprising:
- providing a substrate having a first region and a second region;
forming a first fin-shaped structure on the first region;
forming a shallow trench isolation (STI) around the first fin-shaped structure;
after forming the STI performing an in-situ steam generation (ISSG) process to form a first oxide layer on the first fin-shaped structure so that the first oxide layer covers a top surface and sidewalls of the first fin-shaped structure without extending to a top surface of the STI; and
forming a second oxide layer on and directly contacting the first oxide layer and the STI.
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Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; forming a shallow trench isolation (STI) around the first fin-shaped structure; forming a first oxide layer on the first fin-shaped structure; and then forming a second oxide layer on the first oxide layer and the STI.
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Citations
12 Claims
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1. A method for fabricating semiconductor device, comprising:
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providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; forming a shallow trench isolation (STI) around the first fin-shaped structure; after forming the STI performing an in-situ steam generation (ISSG) process to form a first oxide layer on the first fin-shaped structure so that the first oxide layer covers a top surface and sidewalls of the first fin-shaped structure without extending to a top surface of the STI; and forming a second oxide layer on and directly contacting the first oxide layer and the STI. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification