Stacked-chip backside-illuminated SPAD sensor with high fill-factor
First Claim
1. A photon detection device, comprising:
- a single photon avalanche diode (SPAD) disposed in an active breakdown region of a first semiconductor layer;
a guard ring structure disposed in the first semiconductor layer surrounding the SPAD to isolate the SPAD inside the guard ring structure;
a well region disposed in the first semiconductor layer surrounding the guard ring structure and disposed along an outside perimeter of the photon detection device in the first semiconductor layer; and
a contact region disposed in the well region only in a corner region of the outside perimeter such that there is no contact region disposed along side regions of the outside perimeter,wherein the well region is non-circular in shape in order to include the corner region and the side regions surrounding the guard ring structure such that a first distance between an inside edge of the guard ring structure and the contact region in the corner region of the outside perimeter is greater than a second distance between the inside edge of the guard ring structure and the side regions of the outside perimeter such that an electric field distribution is uniform around the photon detection device, wherein the first semiconductor layer comprises a p−
doped epitaxial layer, wherein the well region comprises a p−
doped semiconductor region, and wherein the contact region comprises a p+ doped semiconductor region.
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Accused Products
Abstract
A photon detection device includes a single photon avalanche diode (SPAD) disposed in a semiconductor layer. A guard ring structure is disposed in the semiconductor layer surrounding the SPAD to isolate the SPAD. A well region is disposed in the semiconductor layer surrounding the guard ring structure and disposed along an outside perimeter of the photon detection device. A contact region is disposed in the well region only in a corner region of the outside perimeter such that there is no contact region disposed along side regions of the outside perimeter. A distance between an inside edge of the guard ring structure and the contact region in the corner region of the outside perimeter is greater than a distance between the inside edge of the guard ring structure and the side regions of the outside perimeter such that an electric field distribution is uniform around the photon detection device.
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Citations
22 Claims
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1. A photon detection device, comprising:
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a single photon avalanche diode (SPAD) disposed in an active breakdown region of a first semiconductor layer; a guard ring structure disposed in the first semiconductor layer surrounding the SPAD to isolate the SPAD inside the guard ring structure; a well region disposed in the first semiconductor layer surrounding the guard ring structure and disposed along an outside perimeter of the photon detection device in the first semiconductor layer; and a contact region disposed in the well region only in a corner region of the outside perimeter such that there is no contact region disposed along side regions of the outside perimeter, wherein the well region is non-circular in shape in order to include the corner region and the side regions surrounding the guard ring structure such that a first distance between an inside edge of the guard ring structure and the contact region in the corner region of the outside perimeter is greater than a second distance between the inside edge of the guard ring structure and the side regions of the outside perimeter such that an electric field distribution is uniform around the photon detection device, wherein the first semiconductor layer comprises a p−
doped epitaxial layer, wherein the well region comprises a p−
doped semiconductor region, and wherein the contact region comprises a p+ doped semiconductor region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A photon sensing system, comprising:
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a photon detection array having a plurality of photon detection devices, wherein each one of the photon detection devices includes; a single photon avalanche diode (SPAD) disposed in an active breakdown region of a first semiconductor layer; a guard ring structure disposed in the first semiconductor layer surrounding the SPAD to isolate the SPAD inside the guard ring structure; a well region disposed in the first semiconductor layer surrounding the guard ring structure and disposed along an outside perimeter of the photon detection device in the first semiconductor layer; and a contact region disposed in the well region only in a corner region of the outside perimeter such that there is no contact region disposed along side regions of the outside perimeter, wherein the well region is non-circular in shape such that the well region includes the corner region and the side regions surrounding the guard ring structure, such that a first distance between an inside edge of the guard ring structure and the contact region in the corner region of the outside perimeter is greater than a second distance between the inside edge of the guard ring structure and the side regions of the outside perimeter such that an electric field distribution is uniform around the photon detection device, wherein the first semiconductor layer comprises a p−
doped epitaxial layer, wherein the well region comprises a p−
doped semiconductor region, and wherein the contact region comprises a p+ doped semiconductor region; anda support circuitry coupled to the photon detection array to support operation of the photon detection array, wherein the support circuitry is disposed in a second semiconductor layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification