Method of forming internal spacer for nanowires
First Claim
1. A method of forming a semiconductor device comprising horizontal nanowires, the method comprising:
- providing a semiconductor structure comprising at least one fin, the at least one fin comprising a stack of layers of a sacrificial material alternated with layers of a nanowire material, the semiconductor structure comprising a dummy gate partly covering the stack of layers of the at least one fin;
at least partly removing the sacrificial material, in between the layers of the nanowire material, next to the dummy gate thereby forming a void;
providing spacer material within the void thereby forming an internal spacer;
removing the dummy gate; and
selectively removing the sacrificial material in a part of the at least one fin which was covered by the dummy gate, thereby releasing nanowires,wherein the sacrificial material, in between the layers of the nanowire material, next to the dummy gate is removed and the internal spacer is provided before removing the dummy gate and the sacrificial material so as to release the nanowires,wherein providing the spacer material comprises (i) a first step where a first material is filled bottom up and (ii) a second step comprising a continuous fill with a second material.
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Abstract
A method of forming a semiconductor device comprising horizontal nanowires is described. An example method involves providing a semiconductor structure comprising at least one fin, where the fin includes an alternating stack of layers of sacrificial material and nanowire material, and where the semiconductor structure includes a dummy gate partly covering the stack of layers. The method further involves at least partly removing the sacrificial material, in between the layers of nanowire material, next to the dummy gate thereby forming a void. Still further, the method involves providing spacer material within the void thereby forming an internal spacer. Yet still further the method involves removing the dummy gate, and selectively removing the sacrificial material in that part of the fin which was covered by the dummy gate, thereby releasing the nanowires. The internal spacer is provided before removing the dummy gate and the sacrificial material to release the nanowires.
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Citations
18 Claims
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1. A method of forming a semiconductor device comprising horizontal nanowires, the method comprising:
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providing a semiconductor structure comprising at least one fin, the at least one fin comprising a stack of layers of a sacrificial material alternated with layers of a nanowire material, the semiconductor structure comprising a dummy gate partly covering the stack of layers of the at least one fin; at least partly removing the sacrificial material, in between the layers of the nanowire material, next to the dummy gate thereby forming a void; providing spacer material within the void thereby forming an internal spacer; removing the dummy gate; and selectively removing the sacrificial material in a part of the at least one fin which was covered by the dummy gate, thereby releasing nanowires, wherein the sacrificial material, in between the layers of the nanowire material, next to the dummy gate is removed and the internal spacer is provided before removing the dummy gate and the sacrificial material so as to release the nanowires, wherein providing the spacer material comprises (i) a first step where a first material is filled bottom up and (ii) a second step comprising a continuous fill with a second material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of forming a semiconductor device, the method comprising:
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providing a semiconductor structure comprising at least one fin, the at least one fin comprising a stack of layers of a sacrificial material alternated with layers of a nanowire material, the semiconductor structure comprising a dummy gate partly covering the stack of layers of the at least one fin; at least partly removing the sacrificial material, in between the layers of the nanowire material, next to the dummy gate so as to form a void; forming an internal spacer by providing spacer material within the void; and after forming the internal spacer, (i) removing the dummy gate and (ii) selectively removing the sacrificial material in a part of the fin which was covered by the dummy gate, so as to release nanowires, wherein forming the internal spacer comprises (i) a first step where a first material is filled from a bottom portion of the void toward a top portion of the void and (ii) a second step comprising a continuous fill with a second material. - View Dependent Claims (16, 17, 18)
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Specification