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Semiconductor device and method for manufacturing the same

  • US 10,153,346 B2
  • Filed: 03/24/2016
  • Issued: 12/11/2018
  • Est. Priority Date: 12/15/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a non-single-crystal oxide semiconductor film as a channel formation region;

    a source electrode and a drain electrode;

    a gate insulating layer over the non-single-crystal oxide semiconductor film, the source electrode, and the drain electrode; and

    a gate electrode layer over the gate insulating layer,wherein the non-single-crystal oxide semiconductor film comprises at least indium and gallium,wherein each of the source electrode and the drain electrode consists essentially of any one of molybdenum, titanium, tantalum, tungsten, copper, chromium, neodymium, and scandium,wherein a concentration of chlorine in the non-single-crystal oxide semiconductor film is lower than or equal to 2×

    1018 atoms/cm3,wherein the non-single-crystal oxide semiconductor film has a density of higher than 6.0 g/cm3, andwherein a top surface of the non-single-crystal oxide semiconductor film is coplanar with a top surface of the source electrode and a top surface of the drain electrode.

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