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Semiconductor structure

  • US 10,153,353 B1
  • Filed: 06/05/2017
  • Issued: 12/11/2018
  • Est. Priority Date: 06/05/2017
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a substrate, having an interlayer dielectric (ILD) disposed thereon;

    a first gate structure, disposed in the ILD, wherein the first gate structure comprises a gate electrode and two inward curving spacers disposed on two sides of the gate electrode, and the gate electrode has four inward curving sidewalls; and

    a second gate structure disposed in the ILD, wherein the second gate structure comprises a second gate electrode and two outward curving spacers disposed on two sides of the gate electrode.

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