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Semiconductor device and a method of making a semiconductor device

  • US 10,153,365 B2
  • Filed: 08/10/2016
  • Issued: 12/11/2018
  • Est. Priority Date: 09/11/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate having a first conductivity type;

    a layer of doped silicon located on the substrate;

    a trench extending into the layer of silicon;

    a gate electrode and gate dielectric located in the trench;

    a drain region;

    a body region having a second conductivity type located adjacent the trench and above the drain region; and

    a source region having the first conductivity type located adjacent the trench and above the body region,wherein the layer of doped silicon in a region located beneath the body region includes donor ions and acceptor ions forming a net doping concentration within the region beneath the body region by compensation,wherein the net doping concentration of the layer of doped silicon as a function of depth has a minimum for the entire semiconductor device in the region located immediately beneath the body region, anda cap layer located at a top of the layer of doped silicon and beneath the body region and the cap layer is lower doped than the layer of doped silicon beneath the cap layer.

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