Semiconductor device and method for manufacturing semiconductor device
First Claim
1. A semiconductor device comprising:
- an oxide semiconductor film;
a gate insulating film over the oxide semiconductor film;
a gate electrode layer overlapping with a channel formation region of the oxide semiconductor film with the gate insulating film therebetween;
a first insulating film covering a top surface and a side surface of the gate electrode layer;
a first electrode layer below the oxide semiconductor film;
a second electrode layer below the oxide semiconductor film;
a first wiring layer over the oxide semiconductor film; and
a second wiring layer over the oxide semiconductor film,wherein the oxide semiconductor film comprises the channel formation region, a first low resistance region, and a second low resistance region,wherein the first electrode layer and the first wiring layer overlap with each other and are electrically connected to the first low resistance region,wherein the second electrode layer and the second wiring layer overlap with each other and are electrically connected to the second low resistance region, andwherein the first insulating film comprises aluminum oxide.
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Abstract
A miniaturized transistor having excellent electrical characteristics is provided with high yield. Further, a semiconductor device including the transistor and having high performance and high reliability is manufactured with high productivity. In a semiconductor device including a transistor in which an oxide semiconductor film including a channel formation region and low-resistance regions between which the channel formation region is sandwiched, a gate insulating film, and a gate electrode layer whose top surface and side surface are covered with an insulating film including an aluminum oxide film are stacked, a source electrode layer and a drain electrode layer are in contact with part of the oxide semiconductor film and the top surface and a side surface of the insulating film including an aluminum oxide film.
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Citations
19 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor film; a gate insulating film over the oxide semiconductor film; a gate electrode layer overlapping with a channel formation region of the oxide semiconductor film with the gate insulating film therebetween; a first insulating film covering a top surface and a side surface of the gate electrode layer; a first electrode layer below the oxide semiconductor film; a second electrode layer below the oxide semiconductor film; a first wiring layer over the oxide semiconductor film; and a second wiring layer over the oxide semiconductor film, wherein the oxide semiconductor film comprises the channel formation region, a first low resistance region, and a second low resistance region, wherein the first electrode layer and the first wiring layer overlap with each other and are electrically connected to the first low resistance region, wherein the second electrode layer and the second wiring layer overlap with each other and are electrically connected to the second low resistance region, and wherein the first insulating film comprises aluminum oxide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a first transistor comprising a silicon semiconductor film; and a second transistor over the first transistor, the second transistor comprising; an oxide semiconductor film; a gate insulating film over the oxide semiconductor film; a gate electrode layer overlapping with a channel formation region of the oxide semiconductor film with the gate insulating film therebetween; a first insulating film covering a top surface and a side surface of the gate electrode layer; a first electrode layer below the oxide semiconductor film; a second electrode layer below the oxide semiconductor film; a first wiring layer over the oxide semiconductor film, and a second wiring layer over the oxide semiconductor film, wherein the oxide semiconductor film comprises the channel formation region, a first low resistance region, and a second low resistance region, wherein the first electrode layer and the first wiring layer overlap with each other and are electrically connected to the first low resistance region, wherein the second electrode layer and the second wiring layer overlap with each other and are electrically connected to the second low resistance region, and wherein the first insulating film comprises aluminum oxide. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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an oxide semiconductor film; a gate insulating film over the oxide semiconductor film; a gate electrode layer overlapping with a channel formation region of the oxide semiconductor film with the gate insulating film therebetween; a first insulating film over and in contact with a top surface of the gate electrode layer; a first electrode layer below the oxide semiconductor film; a second electrode layer below the oxide semiconductor film; a first wiring layer over the oxide semiconductor film; and a second wiring layer over the oxide semiconductor film, wherein the oxide semiconductor film comprises the channel formation region, a first low resistance region, and a second low resistance region, wherein the first electrode layer and the first wiring layer overlap with each other and are electrically connected to the first low resistance region, wherein the second electrode layer and the second wiring layer overlap with each other and are electrically connected to the second low resistance region, wherein the first insulating film comprises aluminum oxide, and wherein the first insulating film is in contact with the gate insulating film. - View Dependent Claims (18, 19)
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Specification