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Semiconductor device and method for manufacturing semiconductor device

  • US 10,153,375 B2
  • Filed: 08/04/2017
  • Issued: 12/11/2018
  • Est. Priority Date: 10/13/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an oxide semiconductor film;

    a gate insulating film over the oxide semiconductor film;

    a gate electrode layer overlapping with a channel formation region of the oxide semiconductor film with the gate insulating film therebetween;

    a first insulating film covering a top surface and a side surface of the gate electrode layer;

    a first electrode layer below the oxide semiconductor film;

    a second electrode layer below the oxide semiconductor film;

    a first wiring layer over the oxide semiconductor film; and

    a second wiring layer over the oxide semiconductor film,wherein the oxide semiconductor film comprises the channel formation region, a first low resistance region, and a second low resistance region,wherein the first electrode layer and the first wiring layer overlap with each other and are electrically connected to the first low resistance region,wherein the second electrode layer and the second wiring layer overlap with each other and are electrically connected to the second low resistance region, andwherein the first insulating film comprises aluminum oxide.

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