Semiconductor device and method for manufacturing semiconductor device

• US 10,153,375 B2
• Filed: 08/04/2017
• Issued: 12/11/2018
• Est. Priority Date: 10/13/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Sasagawa, Shinya, Kurata, Motomu
• Primary Examiner(s): Wilson, Allan R
• Application Number:
  US15/669,234
• Publication Number:
  US 20170358685A1
• Time in Patent Office: 494 Days
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10B 41/70 the floating gate being an electrode shared by two or more components

Abstract

A miniaturized transistor having excellent electrical characteristics is provided with high yield. Further, a semiconductor device including the transistor and having high performance and high reliability is manufactured with high productivity. In a semiconductor device including a transistor in which an oxide semiconductor film including a channel formation region and low-resistance regions between which the channel formation region is sandwiched, a gate insulating film, and a gate electrode layer whose top surface and side surface are covered with an insulating film including an aluminum oxide film are stacked, a source electrode layer and a drain electrode layer are in contact with part of the oxide semiconductor film and the top surface and a side surface of the insulating film including an aluminum oxide film.

Claims

1. A semiconductor device comprising:

an oxide semiconductor film;

a gate insulating film over the oxide semiconductor film;

a gate electrode layer overlapping with a channel formation region of the oxide semiconductor film with the gate insulating film therebetween;

a first insulating film covering a top surface and a side surface of the gate electrode layer;

a first electrode layer below the oxide semiconductor film;

a second electrode layer below the oxide semiconductor film;

a first wiring layer over the oxide semiconductor film; and

a second wiring layer over the oxide semiconductor film,

wherein the oxide semiconductor film comprises the channel formation region, a first low resistance region, and a second low resistance region,

wherein the first electrode layer and the first wiring layer overlap with each other and are electrically connected to the first low resistance region,

wherein the second electrode layer and the second wiring layer overlap with each other and are electrically connected to the second low resistance region, and

wherein the first insulating film comprises aluminum oxide.

2. The semiconductor device according to claim 1, wherein the first insulating film is over and in contact with the gate insulating film.

3. The semiconductor device according to claim 1, further comprising a second insulating film over the first insulating film.

4. The semiconductor device according to claim 1, wherein one of the first wiring layer and the second wiring layer overlaps with the gate electrode layer with the first insulating film therebetween.

5. The semiconductor device according to claim 1, wherein each of the first low resistance region and the second low resistance region includes a dopant.

6. The semiconductor device according to claim 1, wherein the oxide semiconductor film comprises indium, gallium, and zinc.

7. The semiconductor device according to claim 1,

wherein the first wiring layer is a source electrode, and

wherein the second wiring layer is a drain electrode.

8. The semiconductor device according to claim 1, wherein the first insulating film continuously covers the top surface and the side surface of the gate electrode layer.

9. A semiconductor device comprising:

a first transistor comprising a silicon semiconductor film; and

a second transistor over the first transistor, the second transistor comprising;

an oxide semiconductor film;

a gate insulating film over the oxide semiconductor film;

a gate electrode layer overlapping with a channel formation region of the oxide semiconductor film with the gate insulating film therebetween;

a first insulating film covering a top surface and a side surface of the gate electrode layer;

a first electrode layer below the oxide semiconductor film;

a second electrode layer below the oxide semiconductor film;

a first wiring layer over the oxide semiconductor film, and

a second wiring layer over the oxide semiconductor film,

wherein the oxide semiconductor film comprises the channel formation region, a first low resistance region, and a second low resistance region,

wherein the first electrode layer and the first wiring layer overlap with each other and are electrically connected to the first low resistance region,

wherein the second electrode layer and the second wiring layer overlap with each other and are electrically connected to the second low resistance region, and

wherein the first insulating film comprises aluminum oxide.

10. The semiconductor device according to claim 9, wherein the first insulating film is over and in contact with the gate insulating film.

11. The semiconductor device according to claim 9, further comprising a second insulating film over the first insulating film.

12. The semiconductor device according to claim 9, wherein one of the first wiring layer and the second wiring layer overlaps with the gate electrode layer with the first insulating film therebetween.

13. The semiconductor device according to claim 9, wherein each of the first low resistance region and the second low resistance region includes a dopant.

14. The semiconductor device according to claim 9, wherein the oxide semiconductor film comprises indium, gallium, and zinc.

15. The semiconductor device according to claim 9,

wherein the first wiring layer is a source electrode, and

wherein the second wiring layer is a drain electrode.

16. The semiconductor device according to claim 9, wherein the first insulating film continuously covers the top surface and the side surface of the gate electrode layer.

17. A semiconductor device comprising:

an oxide semiconductor film;

a gate insulating film over the oxide semiconductor film;

a gate electrode layer overlapping with a channel formation region of the oxide semiconductor film with the gate insulating film therebetween;

a first insulating film over and in contact with a top surface of the gate electrode layer;

a first electrode layer below the oxide semiconductor film;

a second electrode layer below the oxide semiconductor film;

a first wiring layer over the oxide semiconductor film; and

a second wiring layer over the oxide semiconductor film,

wherein the oxide semiconductor film comprises the channel formation region, a first low resistance region, and a second low resistance region,

wherein the first electrode layer and the first wiring layer overlap with each other and are electrically connected to the first low resistance region,

wherein the second electrode layer and the second wiring layer overlap with each other and are electrically connected to the second low resistance region, wherein the first insulating film comprises aluminum oxide, and

wherein the first insulating film is in contact with the gate insulating film.

18. The semiconductor device according to claim 17, wherein the oxide semiconductor film comprises indium, gallium, and zinc.

19. The semiconductor device according to claim 17,

wherein the first wiring layer is a source electrode, and

wherein the second wiring layer is a drain electrode.